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SD103AWS-G - SD103CWS-G
SENSITRON
SEMICONDUCTOR
SCHOTTKY BARRIER SWITCHING DIODE
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Data Sheet 3331, Rev. -
Green Products
Features
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Green Products in Compliance with the RoHS Directive
Low Forward Voltage Drop
·
·
Guard Ring Construction for
Transient Protection
E
D
·
Negligible Reverse Recovery Time
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SOD-323
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Low Reverse Capacitance
Dim Min Max Min Max
Ultra-Small Surface Mount Package
A
B
C
D
E
G
H
2.30 2.70 0.091 0.106
1.75 1.95 0.069 0.077
1.15 1.35 0.045 0.053
0.25 0.35 0.010 0.014
0.05 0.15 0.002 0.006
0.70 0.95 0.028 0.037
A B
Mechanical Data
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·
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Case: SOD-323, Plastic
Polarity: Cathode Band
G
Leads: Solderable per MIL-STD-202,
Method 208
C
H
0.30
—
0.012
—
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SD103AWS-G Marking: S4
SD103BWS-G Marking: S5 or S4
SD103CWS-G Marking: S6 or S5 or S4
Weight: 0.004 grams (approx.)
In mm
In inch
J
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@ TA = 25°C unless otherwise specified
Maximum Ratings
SD103AWS-G
SD103BWS-G
Unit
Characteristic
Symbol
SD103CWS-G
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
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V
40
28
30
20
14
VR(RMS)
IFM
V
mA
A
RMS Reverse Voltage
21
350
Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current @ t £ 1.0s
Power Dissipation (Note 1)
IFSM
1.5
Pd
200
mW
°C/W
°C
RqJA
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
625
Tj, TSTG
-65 to +125
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
IR = 10mA
IR = 10mA
IR = 10mA
Reverse Breakdown Voltage (Note 2)
SD103AWS-G
SD103BWS-G
SD103CWS-G
40
30
20
V(BR)R
¾
¾
V
IF = 20mA
0.37
0.60
VFM
Forward Voltage Drop
¾
¾
¾
¾
V
IF = 200mA
Peak Reverse Current
SD103AWS-G
SD103BWS-G
SD103CWS-G
VR = 30V
IRM
V
R = 20V
R = 10V
5.0
mA
V
VR = 0V, f = 1.0MHz
Cj
trr
Junction Capacitance
¾
¾
50
10
¾
¾
pF
ns
IF = IR = 200mA,
Irr = 0.1 x IR, RL = 100W
Reverse Recovery Time
Notes:
1. Valid provided that leads are kept at ambient temperature.
2. Test period <3000ms.
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