SD103AWS/BWS/CWS-Q1
Small Signa
l
350mA Surface Mount
Schottky Diode-20V-40V
Package outline
Features
• Low current rectification and high speed switching.
• Extremely small surface mount type.
SOD-323
• Low forward voltage drop.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts for green partner, exceeds environmental
standards of MIL-STD-19500 /228
0.071(1.80)
0.063(1.60)
Compliant to Halogen-free
•
Suffix "-Q1" for AEC-Q101
0.039(1.00)
0.031(0.80)
Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-323
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
0.108(2.75)
0.096(2.45)
• Polarity : Indicated by cathode band
• Mounting Position : Any
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
Symbol
SD103AWS-Q1
SD103CWS-Q1
PARAMETER
CONDITIONS
SD103BWS-Q1
UNIT
V
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
VRRM
VRWM
VR
VR(RMS)
IF(AV)
40
28
30
20
14
RMS reverse voltaget
V
21
350
Average rectified output current
Non-repetitive peak forward surge current
Total device dissipation
mA
@ t < 1.0s
IFSM
PD
1.5
A
mW
200
RθJA
TJ
Junction to ambient
625
°C/W
oC
Thermal resistance
-55 ~ +125
Operating temperature
oC
TSTG
Storage temperature
-65 ~ +125
TYP.
Electrical Characteristics(AT TA=25oC unless otherwise noted)
Symbol
MIN.
MAX.
UNIT
V
PARAMETER
CONDITIONS
I =100uA,
SD103AWS-Q1
SD103BWS-Q1
SD103CWS-Q1
40
30
20
R
V(BR)R
Reverse breakdown voltage
I =100uA
,
R
I =100uA,
R
IF = 20mA
0.37
0.60
Forward voltage
Reverse current
VF
IR
V
IF = 200mA
V = 30 V SD103AWS-Q1
,
VRR = 20 V, SD103BWS-Q1
5.0
uA
V = 10 V
, SD103CWS-Q1
R
VR = 0 V, f = 1.0MHz
50
10
Typical Junction capacitance
Reverse recover time
pF
ns
CJ
trr
IF = IR = 200mA, Irr = 0.1 X IR,
RL = 100 OHM
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FAX:+86-755-81482812
Document ID
AS-1160015
Issued Date
2003/03/08
Revised Date
2021/10/18
Revision
E
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