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SD103CWS PDF预览

SD103CWS

更新时间: 2024-11-16 06:10:35
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SYNSEMI 二极管
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2页 34K
描述
SCHOTTKY BARRIER DIODES

SD103CWS 数据手册

 浏览型号SD103CWS的Datasheet PDF文件第2页 
SCHOTTKY BARRIER DIODES  
SD103AWS - SD103CWS  
SOD-323  
FEATURES :  
* For general purpose applications  
1.80  
1.60  
* The SD103 series is a metal-on-silicon  
Schottky barrier device which is  
protected by a PN junction guard ring.  
* The low forward voltage drop and fast switching  
make it ideal for protection of MOS devices,  
steering, biasing and coupling diodes for fast  
switching and low logic level applications.  
* These diodes are also available in the MiniMELF case  
with type designations LL103A thru LL103C.  
* Pb / RoHS Free  
2.80  
2.30  
MECHANICAL DATA :  
* Case : SOD-323 plastic Case  
* Weight : approx. 0.004 g  
Dimensions in millimeters  
* SD103AWS Marking Code : S4  
* SD103BWS Marking Code : S5  
* SD103CWS Marking Code : S6  
Maximum Ratings and Thermal Characteristics (TC = 25 °C unless otherwise noted)  
Parameter  
Symbol  
Value  
Unit  
SD103AWS  
SD103BWS  
SD103CWS  
40  
30  
20  
2
VRRM  
Repetitive Peak Reverse Voltage  
V
IFSM  
Ptot  
Maximum Single Cycle Surge 10 µs Square Wave  
Power Dissipation (Infinite Heat Sink)  
Thermal Resistance Junction to Ambient Air  
Junction Temperature  
A
mW  
°C/W  
°C  
150(1)  
650(1)  
125(1)  
Rθ  
JA  
TJ  
TSTG  
Storage temperature range  
-55 to + 150  
°C  
Electrical Characteristics (TJ = 25°C unless otherwise noted)  
Test Condition  
VR = 30 V  
Min  
Typ  
Max  
Unit  
Parameter  
Symbol  
SD103AWS  
SD103BWS  
SD103CWS  
-
-
-
-
-
-
-
-
5
5
IR  
Reverse Current  
VR = 20 V  
VR = 10 V  
IF = 20mA  
IF = 200mA  
μA  
-
5
-
0.37  
0.60  
-
VF  
Ctot  
Trr  
Forward Voltage Drop  
Junction Capacitance  
Reverse Recovery Time  
V
-
VR = 0 V, f = 1MHz  
IF = IR = 50mA to 200mA  
recover to 0.1IR  
50  
pF  
ns  
-
10  
-
Note:  
(1) Valid provided that electrodes are kept at ambient temperature.  
Page 1 of 2  
Rev. 01 : May 4, 2006  

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