Datasheet > SCT4045DW7

SCT4045DW7

更新时间： 2024-03-03 10:11:24

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
17页	1864K
描述
SCT4045DW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, lo

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SCT4045DW7 数据手册

SCT4045DW7

N-channel SiC power MOSFET

Datasheet

lOutline

TO-263-7L

V_DSS

750V

45mΩ

31A

R_DS(on)(Typ.)

I_D

P_D

93W

● Features

lInner circuit

1) Low on-resistance

2) Fast switching speed

3) Fast reverse recovery

4) Easy to parallel

(Tab)

(1) Gate

(2) Driver Source

(3)~(7) Power Source

(Tab) Drain

(1)

(2)

*1 Body Diode

(3)~(7)

5) Simple to drive

Please note Driver Source and Power Source are

not exchangeable. Their exchange might lead to

malfunction.

6) Pb-free lead plating ; RoHS compliant

lPackaging specifications

Embossed tape

Packing

● Application

・Solar inverters

Reel size (mm)

Tape width (mm)

Basic ordering unit (pcs)

Taping code

330

・DC/DC converters

・Switch mode power supplies

・Induction heating

1000

Type

Marking

SCT4045DW7

lAbsolute maximum ratings (T_vj= 25°C unless otherwise specified.)

Parameter

Symbol

V_DSS

Value

750

Unit

Drain - source voltage

T_c= 25°C

Continuous drain

and source current

V_GS= V_{GS_on}

I_D, I_S

T_c= 100°C

V_GS= V_{GS_on}T_c= 25°C

Pulsed drain current

I_D,pulse

*1,*3

Body diode pulsed forward current

Body diode surge forward current

Gate - source voltage (DC)

I_S,pulse

T_c= 25°C

V_GS= 0 V

*1,*4

I_S,pulse

V_{GSS_DC}

-4 to +21

-4 to +23

+15 to +18

Gate - source surge voltage (t_surge< 300ns)

Recommended turn-on gate - source drive voltage

Recommended turn-off gate - source drive voltage

Virtual junction temperature

V_{GSS_surge}

V_{GS_on}

V_{GS_off}

T_vj

175

°C

T_stg

Range of storage temperature

-40 to +175

www.rohm.com

TSZ22111・14・001

TSQ50252-SCT4045DW7

23.Aug.2023 - Rev.004

1/15

12 3 4 5 6 7...17

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