Datasheet > SCT4062KW7

SCT4062KW7

更新时间： 2024-03-03 10:08:28

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
17页	1839K
描述
SCT4062KW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, lo

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SCT4062KW7 数据手册

SCT4062KW7

N-channel SiC power MOSFET

Datasheet

lOutline

TO-263-7L

V_DSS

1200V

62mΩ

24A

R_DS(on)(Typ.)

I_D

P_D

93W

● Features

lInner circuit

1) Low on-resistance

2) Fast switching speed

3) Fast reverse recovery

4) Easy to parallel

(Tab)

(1) Gate

(2) Driver Source

(3)~(7) Power Source

(Tab) Drain

(1)

(2)

*1 Body Diode

(3)~(7)

5) Simple to drive

Please note Driver Source and Power Source are

not exchangeable. Their exchange might lead to

malfunction.

6) Pb-free lead plating ; RoHS compliant

lPackaging specifications

Embossed tape

Packing

● Application

・Solar inverters

Reel size (mm)

Tape width (mm)

Basic ordering unit (pcs)

Taping code

330

・DC/DC converters

・Switch mode power supplies

・Induction heating

1000

Type

Marking

SCT4062KW7

lAbsolute maximum ratings (T_vj= 25°C unless otherwise specified.)

Parameter

Symbol

V_DSS

Value

1200

Unit

Drain - source voltage

T_c= 25°C

Continuous drain

and source current

V_GS= V_{GS_on}

I_D, I_S

T_c= 100°C

V_GS= V_{GS_on}T_c= 25°C

Pulsed drain current

I_D,pulse

*1,*3

Body diode pulsed forward current

Body diode surge forward current

Gate - source voltage (DC)

I_S,pulse

T_c= 25°C

V_GS= 0 V

*1,*4

I_S,pulse

V_{GSS_DC}

-4 to +21

-4 to +23

+15 to +18

Gate - source surge voltage (t_surge< 300ns)

Recommended turn-on gate - source drive voltage

Recommended turn-off gate - source drive voltage

Virtual junction temperature

V_{GSS_surge}

V_{GS_on}

V_{GS_off}

T_vj

175

°C

T_stg

Range of storage temperature

-40 to +175

www.rohm.com

TSZ22111・14・001

TSQ50252-SCT4062KW7

23.Aug.2023 - Rev.004

1/15

12 3 4 5 6 7...17

中文翻译

下载PDF

与SCT4062KW7相关器件

型号	品牌	获取价格	描述	数据表
SCT4062KW7 (新产品)	ROHM	获取价格	SCT4062KW7是一款1200V、40A的Nch SiC功率MOSFET。该产品采用沟
SCT4062KW7HR	ROHM	获取价格	SCT4062KW7HR是一款1200V、24A的Nch SiC功率MOSFET。该产品采
SCT4062KWA	ROHM	获取价格	SCT4062KWA is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resist
SCT4062KWAHR	ROHM	获取价格	AEC-Q101 qualified automotive grade product. SCT4062KWAHR is an SiC (Silicon Carbide) tren
SCT474K102D3B25-F	CDE	获取价格	Snubber Film Capacitor
SCT474K122D3B25-F	CDE	获取价格	Snubber Film Capacitor
SCT474K162D3B25-F	CDE	获取价格	Snubber Film Capacitor
SCT474K162D3B28F	CDE	获取价格	CAPACITOR, FILM/FOIL, 1600V, 0.47uF, CHASSIS MOUNT, ROHS COMPLIANT
SCT474K162D3S23	CDE	获取价格	CAPACITOR, FILM/FOIL, 1600V, 0.47uF, CHASSIS MOUNT
SCT474K162D3SL25F	CDE	获取价格	CAPACITOR, FILM/FOIL, 1600V, 0.47uF, CHASSIS MOUNT, ROHS COMPLIANT