5秒后页面跳转
SCT3022ALHRC11 PDF预览

SCT3022ALHRC11

更新时间: 2024-09-30 15:50:47
品牌 Logo 应用领域
罗姆 - ROHM PC
页数 文件大小 规格书
13页 1395K
描述
Power Field-Effect Transistor,

SCT3022ALHRC11 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:,Reach Compliance Code:not_compliant
风险等级:5.62Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:1938940
Samacsys Pin Count:3Samacsys Part Category:MOSFET (N-Channel)
Samacsys Package Category:Transistor Outline, VerticalSamacsys Footprint Name:TO-247N
Samacsys Released Date:2019-09-19 12:06:14Is Samacsys:N
JESD-609代码:e3峰值回流温度(摄氏度):NOT SPECIFIED
端子面层:Tin (Sn)处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SCT3022ALHRC11 数据手册

 浏览型号SCT3022ALHRC11的Datasheet PDF文件第2页浏览型号SCT3022ALHRC11的Datasheet PDF文件第3页浏览型号SCT3022ALHRC11的Datasheet PDF文件第4页浏览型号SCT3022ALHRC11的Datasheet PDF文件第5页浏览型号SCT3022ALHRC11的Datasheet PDF文件第6页浏览型号SCT3022ALHRC11的Datasheet PDF文件第7页 
SCT3022ALHR  
Automotive Grade N-channel SiC power MOSFET  
Datasheet  
lOutline  
TO-247N  
VDSS  
650V  
22mΩ  
93A  
RDS(on) (Typ.)  
*1  
ID  
PD  
339W  
(3)  
(2)  
(1)  
lInner circuit  
lFeatures  
(1) Gate  
(2) Drain  
(3) Source  
1) Qualified to AEC-Q101  
2) Low on-resistance  
3) Fast switching speed  
4) Fast reverse recovery  
5) Easy to parallel  
*Body Diode  
Please note Driver Source and Power Source are  
not exchangeable. Their exchange might lead to  
malfunction.  
6) Simple to drive  
7) Pb-free lead plating ; RoHS compliant  
lPackaging specifications  
Tube  
Packing  
lApplication  
Automobile  
Reel size (mm)  
Tape width (mm)  
Basic ordering unit (pcs)  
Taping code  
-
Switch mode power supplies  
-
30  
Type  
C11  
Marking  
SCT3022AL  
lAbsolute maximum ratings (Ta = 25°C)  
Parameter  
Symbol  
VDSS  
Value  
Unit  
V
Drain - Source Voltage  
650  
93  
*1  
Tc = 25°C  
Tc = 100°C  
A
ID  
Continuous Drain current  
*1  
65  
A
ID  
*2  
Pulsed Drain current  
232  
A
ID,pulse  
VGSS  
Gate - Source voltage (DC)  
-4 to +22  
-4 to +26  
0 / +18  
175  
V
*3  
Gate - Source surge voltage (tsurge < 300nsec)  
Recommended drive voltage  
Junction temperature  
V
VGSS_surge  
*4  
V
VGS_op  
Tj  
°C  
Tstg  
Range of storage temperature  
-55 to +175  
°C  
www.rohm.com  
© 2018 ROHM Co., Ltd. All rights reserved.  
TSZ2211114001  
TSQ50211-SCT3022ALHR  
16.Nov.2018 - Rev.001  
1/12  

与SCT3022ALHRC11相关器件

型号 品牌 获取价格 描述 数据表
SCT3022KL ROHM

获取价格

SCT3022KL是1200V 95A的Nch SiC功率MOSFET。
SCT3022KLC11 ROHM

获取价格

Power Field-Effect Transistor
SCT3022KLHR ROHM

获取价格

沟槽栅极结构的SiC-MOSFET。平面型SiC-MOSFET相比,同一芯片尺寸的导通电阻
SCT3030AL ROHM

获取价格

SCT3030AL是650V 70A的Nch SiC功率MOSFET。
SCT3030ALGC11 ROHM

获取价格

Power Field-Effect Transistor, 70A I(D), 650V, 0.039ohm, 1-Element, N-Channel, Silicon Car
SCT3030ALHR ROHM

获取价格

沟槽栅极结构的SiC-MOSFET。平面型SiC-MOSFET相比,同一芯片尺寸的导通电阻
SCT3030AR ROHM

获取价格

SCT3030AR是非常适用于要求高效率的服务器用电源、太阳能逆变器及电动汽车充电站等的沟
SCT3030ARC14 ROHM

获取价格

Power Field-Effect Transistor, 70A I(D), 650V, 0.039ohm, 1-Element, N-Channel, Silicon Car
SCT3030ARHR (新产品) ROHM

获取价格

AEC-Q101 qualified automotive grade product. SCT3030ARHR is an SiC (Silicon Carbide) trenc
SCT3030AW7 ROHM

获取价格

SCT3030AW7是650V 70A的Nch SiC功率MOSFET。采用沟槽结构,降低