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SC1109_04

更新时间: 2024-09-21 04:05:35
品牌 Logo 应用领域
商升特 - SEMTECH 控制器
页数 文件大小 规格书
19页 368K
描述
Synchronous PWM Controller with Dual Low Dropout Regulator Controllers

SC1109_04 数据手册

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SC1109  
Synchronous PWM Controller with Dual  
Low Dropout Regulator Controllers  
POWER MANAGEMENT  
Features  
Description  
The SC1109 was designed for the latest high speed ‹ Dual linear controllers  
motherboards. It combines a synchronous voltage mode  
controller (switching section) with two low-dropout linear  
regulator controllers. The voltage mode controller pro-  
vides the power supply for the system AGTL bus. The Dual  
linear controllers power the chip set and clock circuitry.  
‹ LDOs track input voltage within 200mV (function of  
the MOSFETs used) until regulation  
‹ Integrated drivers  
‹ Power good signal (SC1109A, SC1109B)  
‹ Soft start  
‹ Lossless current sense  
The SC1109A switching section features lossless current  
sensing, while SC1109C provides programmable over cur-  
rent limit. SC1109 also utilizes latched driver outputs for  
enhanced noise immunity. SC1109A and SC1109C oper-  
ate at a fixed frequency of 200kHz, and the SC1109B is  
available at a fixed frequency of 500kHz. The VTT output  
voltage is internally fixed at 1.2V  
‹ Programmable over current limit (SC1109C)  
‹ 200kHz (SC1109A, SC1109C), and 500kHz (SC1109B)  
fixed frequency.  
Applications  
‹ Pentium® III Motherboards  
‹ Triple power supplies  
The SC1109 linear sections are low dropout regulators  
designed to track the 3.3V power supply when it turns on  
or off. The voltage for the linear controllers LDO1, and LDO2  
are 1.8V/1.5V.  
Typical Application Circuit  
12V IN  
5V STBY  
C1  
0.1uF  
5V IN  
C2  
C3  
SC1109ACSTR or SC1109BCSTR  
C4  
2x1500uF  
0.1uF  
0.1uF  
+
11  
3
VCC  
STBY  
C5  
0.1uF  
4
10  
9
BCAP+  
BST  
DH  
Q1  
R1 2.2  
R2 2.2  
MOSFET N  
C6  
0.1uF  
5
L1 4uH  
1.2V 6A  
7
BCAP-  
PHASE  
VTT  
14  
12  
13  
15  
16  
C7  
3x1500uF  
C8  
0.1uF  
SS/EN  
Q2  
+
MOSFET N  
8
6
2
1
POWER GOOD  
PWRGD  
VOSENSE  
GATE2  
LDOS2  
DL  
GND  
C9  
0.1uF  
GATE1  
LDOS1  
U1  
3.3V IN  
Q3  
Q4  
MOSFET N  
MOSFET N  
C10  
330uF  
+
LDO1 = 1.8V  
LDO2 = 1.5V  
C11  
C12  
+
+
330uF  
330uF  
12V IN  
5V STBY  
C1  
0.1uF  
5V IN  
C2  
2x1500uF  
C3  
U1  
C4  
0.1uF  
0.1uF  
+
11  
3
VCC  
STBY  
C13  
1nF  
R3  
TBD  
C5  
0.1uF  
4
10  
9
BCAP+  
BST  
DH  
Q1  
R1 2.2  
R2 2.2  
MOSFET N  
L1 4uH  
C6  
0.1uF  
5
1.2V 6A  
7
BCAP-  
SS/EN  
PHASE  
VTT  
14  
12  
13  
15  
16  
C7  
3x1500uF  
MOSFET N  
C8  
0.1uF  
Q2  
+
8
6
2
1
OCSET  
OCSET  
DL  
GND  
VOSENSE  
GATE2  
C9  
0.1uF  
GATE1  
LDOS1  
LDOS2  
SC1109CCSTR  
3.3V IN  
Q3  
Q4  
MOSFET N  
MOSFET N  
C10  
+
330uF  
LDO1 = 1.8V  
LDO2 = 1.5V  
C11  
C12  
+
+
330uF  
330uF  
1
www.semtech.com  
Revision: May 13, 2004  

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