Datasheet > SBR5040

SBR5040

更新时间： 2024-11-11 09:34:11

品牌	Logo	应用领域
DAESAN		二极管
页数	文件大小	规格书
2页	244K
描述
CURRENT 50.0 AMPERES VOLTAGE 30 TO 60 VOLTS

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中文翻译

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数据手册

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SBR5040 数据手册

CURRENT 50.0Amperes

VOLTAGE 30 to 60 Volts

SBR5030 THRU SBR5060

Features

· Plastic Package has Underwriters Laboratory

Flammability Classification 94V-0

· Metal silicon junction, majority carrier conduction

· Guard ring for overvoltage protection

· Low power loss, high efficiency

TO-3P

.635(16.13)

.625(15.88)

.320(8.13)

.310(7.87)

.120(3.05)

.115(2.92)

.205(5.21)

.195(4.49)

DIA.

· High current capability, Low forward voltage drop

· High surge capability

.180(4.53)

.170(4.32)

· For use in low voltage, high frequency inverters,

free wheeling, and polarity protection applications

· Dual rectifier construction

.840(21.34)

.820(20.83)

.170(4.32)

.150(3.81)

.12(3.0)

.11(2.8)

· High temperature soldering guaranteed:

250℃/10 seconds, 0.17" (4.3mm) from case

.095

(2.4)

.800(20.32)

.770(19.56)

.030(0.8)

.020(0.5)

.050(1.27)

.045(1.14)

Mechanical Data

.225(5.7)

.205(5.2)

· Case : JEDEC TO-3P molded plastic body

· Terminals : Lead solderable per

MIL-STD-750, Method 2026

CASE

· Polarity : As marked. No suffix indicates Common

Cathode, suffix "A" indicates Common Anode

· Mounting Position : Any

Positive CT

Suffix "C"

Negative CT

Suffix "A"

Dimensions in inches and (millimeters)

· Weight : 0.20ounce, 5.6 grams

Maximum Ratings and Electrical Characteristics

(Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive

load. For capacitive load, derate by 20%)

SBR5050

SBR5060 Units

Symbols

SBR5030 SBR5035 SBR5040 SBR5045

Maximum repetitive peak reverse voltage

Maximum RMS voltage

RRM

RMS

Volts

Maximum DC blocking voltage

VDC

Maximum average forward rectified current

at VR(equiv.)<0.2VR(DC) (See Fig 1)

I(AV

)

50.0

Amps

Peak forward surge current 8.3ms single half

sine-wave superimposed on rated load

(JEDEC method)

FSM

400.0

Maximum instantaneous forward voltage

at 25A (Note 1)

0.65

100

0.70

Volts

Maximum instantaneous reverse

current at rated DC blocking

voltage (Note1)

=25℃

10.0

1.4

=125℃

150

Typical thermal resistance (Note 2)

Operating junction temperature range

Storage temperature range

RθJC

℃/W

℃

-65 to +125

-65 to +150

℃

STG

Notes:

(1) Pulse test: 300μS pulse width, 1% duty cycle

(2) Thermal resistance from junction to case

中文翻译

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与SBR5040相关器件

型号	品牌	获取价格	描述	数据表
SBR5040PF	MICROSEMI	获取价格	50 Amp Schottky Rectifier Pressfit
SBR5040PFE3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 50A, 40V V(RRM), Silicon, PRESSFIT-1
SBR5040PFR	MICROSEMI	获取价格	50 Amp Schottky Rectifier Pressfit
SBR5040PFRE3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 50A, 40V V(RRM), Silicon, PRESSFIT-1
SBR5045	DAESAN	获取价格	CURRENT 50.0 AMPERES VOLTAGE 30 TO 60 VOLTS
SBR5045PF	MICROSEMI	获取价格	50 Amp Schottky Rectifier Pressfit
SBR5045PFR	MICROSEMI	获取价格	50 Amp Schottky Rectifier Pressfit
SBR5045PFRE3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 50A, 45V V(RRM), Silicon, PRESSFIT-1
SBR5050	DAESAN	获取价格	CURRENT 50.0 AMPERES VOLTAGE 30 TO 60 VOLTS
SBR5050PF	MICROSEMI	获取价格	50 Amp Schottky Rectifier Pressfit

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