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SBG2045CT-TP PDF预览

SBG2045CT-TP

更新时间: 2023-01-02 16:02:00
品牌 Logo 应用领域
美微科 - MCC 功效瞄准线二极管
页数 文件大小 规格书
2页 121K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 45V V(RRM), Silicon, D2PAK-3

SBG2045CT-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-263
包装说明:D2PAK-3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.82
其他特性:LOW POWER LOSS应用:EFFICIENCY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
最大非重复峰值正向电流:225 A元件数量:2
相数:1端子数量:2
最大输出电流:20 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:45 V表面贴装:YES
技术:SCHOTTKY端子面层:MATTE TIN
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:10

SBG2045CT-TP 数据手册

 浏览型号SBG2045CT-TP的Datasheet PDF文件第2页 
M C C  
SBG2030CT  
THRU  
SBG2045CT  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
20 Amp  
Schottky  
Barrier Rectifier  
30 to 45 Volts  
Features  
·
·
·
·
·
Meatl of Silicon Rectifier, Majority Conducton  
Guard ring for transient protection  
Low Forward Voltage Drop  
High Current Capability, High Efficiency  
Low Power Loss  
D2PAK  
Maximum Ratings  
·
·
Operating Junction Temperature: -55°C to +125°C  
Storage Temperature: -55°C to +150°C  
K
MCC  
Catalog  
Number  
Maximum  
Recurrent  
Peak Reverse  
Voltage  
30V  
Maximum Maximum  
I
A
RMS  
Voltage  
DC  
Blocking  
Voltage  
30V  
K
D
C
H
SBG2030CT  
SBG2035CT  
SBG2040CT  
SBG2045CT  
21V  
B
K
1
2
35V  
40V  
45V  
24.5V  
28V  
35V  
40V  
F
G
31.5V  
45V  
E
J
PIN 1  
PIN 2  
K
HEATSINK  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
20 A  
TC = 105°C  
Peak Forward Surge  
Current  
Maximum  
Instantaneous  
Forward Voltage  
IFSM  
225A  
8.3ms, half sine  
ꢀꢁꢂꢃꢄꢅꢁꢆꢄꢅ  
ꢇ ꢇ ꢇ ꢇ  
INCHES  
ꢂꢁꢄ  
MM  
ꢀꢁꢂ  
A
B
ꢂꢈꢉ  
.421  
.625  
.364  
ꢂꢁꢄ  
9.65  
14.60  
8.25  
ꢂꢈꢉ  
10.69  
15.88  
9.25  
ꢄꢆꢊꢃ  
VF  
.55V  
IFM = 10A;  
TJ = 25°C  
.380  
.575  
.325  
C
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
D
E
F
G
H
.045  
.020  
.090  
.090  
.080  
.045  
.012  
.055  
.045  
.110  
.110  
.115  
.055  
.025  
1.14  
0.51  
2.29  
2.29  
2.03  
1.14  
0.30  
1.40  
1.14  
2.79  
2.79  
2.92  
1.40  
0.64  
IR  
1.0mA  
50mA  
TJ = 25°C  
T J = 100°C  
I
J
Typical Junction  
Capacitance  
CJ  
350pF Measured at  
1.0MHz,  
K
.172  
.190  
4.37  
4.83  
VR=4.0V  
*Pulse Test: Pulse Width 300msec, Duty Cycle 2%  
www.mccsemi.com  
Revision: 3  
2003/04/30  

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