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SBG3050CT PDF预览

SBG3050CT

更新时间: 2024-09-24 22:22:23
品牌 Logo 应用领域
美台 - DIODES 二极管瞄准线功效
页数 文件大小 规格书
2页 48K
描述
30A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

SBG3050CT 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TO-263
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.91
其他特性:FREE WHEELING DIODE, LOW POWER LOSS应用:EFFICIENCY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.7 VJESD-30 代码:R-PSSO-G2
JESD-609代码:e0最大非重复峰值正向电流:250 A
元件数量:2相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:30 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:50 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SBG3050CT 数据手册

 浏览型号SBG3050CT的Datasheet PDF文件第2页 
SBG3030CT - SBG3060CT  
30A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER  
Features  
Schottky Barrier Chip  
Guard Ring Die Construction for  
Transient Protection  
Low Power Loss, High Efficiency  
High Surge Capability  
High Current Capability and Low Forward  
Voltage Drop  
E
D2PAK  
Min  
Max  
10.69  
15.88  
1.14  
2.79  
4.83  
1.40  
1.40  
9.25  
0.64  
2.92  
2.79  
Dim  
A
G
H
A
9.65  
14.60  
0.51  
2.29  
4.37  
1.14  
1.14  
8.25  
0.30  
2.03  
2.29  
4
Surge Overload Rating to 250A Peak  
B
For Use in Low Voltage, High Frequency  
Inverters, Free Wheeling, and Polarity  
Protection Applications  
Plastic Material: UL Flammability  
Classification Rating 94V-0  
C
J
B
D
1
2
3
E
G
H
M
D
K
Mechanical Data  
J
C
L
Case: D2PAK Molded Plastic  
Terminals: Solderable per MIL-STD-202,  
Method 208  
K
L
PIN 1  
PIN 3  
PIN 2 & 4  
M
Polarity: See Diagram  
Marking: Type Number  
Weight: 1.7 grams (approx.)  
Mounting Position: Any  
All Dimensions in mm  
@ TA = 25C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
SBG  
3030CT  
SBG  
3050CT  
SBG  
3060CT  
SBG  
3040CT  
SBG  
3045CT  
Characteristic  
Symbol  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
30  
21  
40  
28  
45  
50  
35  
60  
42  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
32  
30  
V
A
Average Rectified Output Current  
@ TC = 100C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
250  
A
VFM  
IRM  
Forward Voltage, per Element  
@ IF = 15A, TC  
=
25C  
0.55  
0.70  
V
Peak Reverse Current  
at Rated DC Blocking Voltage  
@ TC  
@ TC = 100C  
=
25C  
1.0  
75  
mA  
Cj  
Typical Junction Capacitance (Note 2)  
420  
1.5  
pF  
K/W  
C  
RJC  
Typical Thermal Resistance Junction to Case (Note 1)  
Operating and Storage Temperature Range  
Tj, TSTG  
-65 to +150  
Notes:  
1. Thermal resistance: junction to case mounted on heat sink.  
2. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.  
DS30025 Rev. C-2  
1 of 2  
SBG3030CT - SBG3060CT  

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