SBF720T1G

更新时间： 2024-10-02 11:01:35

品牌	Logo	应用领域
安森美 - ONSEMI		晶体管功率双极晶体管
页数	文件大小	规格书
4页	124K
描述
NPN 双极小信号晶体管

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中文翻译

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数据手册

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SBF720T1G 数据手册

BF720T1G, BF720T3G

NPN Silicon Transistor

Features

 These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS

Compliant

http://onsemi.com

MAXIMUM RATINGS

NPN SILICON TRANSISTOR

SURFACE MOUNT

Rating

Collector -- Emitter Voltage

Collector -- Base Voltage

Collector -- Emitter Voltage

Emitter -- Base Voltage

Collector Current

Symbol

Value

300

Unit

Vdc

mAdc

CEO

CBO

CER

EBO

300

COLLECTOR 2,4

5.0

BASE

100

Total Power Dissipation up to T = 25C

1.5

Storage Temperature Range

Junction Temperature

--65 to +150

150

C

stg

EMITTER 3

C

THERMAL CHARACTERISTICS

Characteristic

MARKING

DIAGRAM

Symbol

Max

Unit

Thermal Resistance,

83.3

C/W

Junction--to--Ambient (Note 1)

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

AYW

DCG

SOT--223 (TO--261)

1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x

CASE 318E

STYLE 1

0.059 in.; mounting pad for the collector lead min. 0.93 in .

= Assembly Location

= Year

= Work Week

DC = Device Code

= Pb--Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

†

Device

Package

Shipping

BF720T1G

SOT--223

(Pb--Free)

1000 / Tape & Reel

4000 / Tape & Reel

BF720T3G

SOT--223

(Pb--Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.



Semiconductor Components Industries, LLC, 2010

Publication Order Number:

September, 2010 -- Rev. 7

BF720T1/D

12 3 4

中文翻译

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