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SBFR30LT1 PDF预览

SBFR30LT1

更新时间: 2024-11-21 20:10:51
品牌 Logo 应用领域
安森美 - ONSEMI 放大器光电二极管晶体管
页数 文件大小 规格书
4页 59K
描述
TRANSISTOR 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, CASE 318-08, 3 PIN, FET General Purpose Small Signal

SBFR30LT1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOT-23包装说明:CASE 318-08, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.17
配置:SINGLE最小漏源击穿电压:25 V
FET 技术:JUNCTION最大反馈电容 (Crss):1.5 pF
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e0湿度敏感等级:1
元件数量:1端子数量:3
工作模式:DEPLETION MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

SBFR30LT1 数据手册

 浏览型号SBFR30LT1的Datasheet PDF文件第2页浏览型号SBFR30LT1的Datasheet PDF文件第3页浏览型号SBFR30LT1的Datasheet PDF文件第4页 
BFR30LT1, BFR31LT1  
JFET Amplifiers  
N−Channel  
Features  
Pb−Free Package is Available  
http://onsemi.com  
2 SOURCE  
3
GATE  
MAXIMUM RATINGS  
Rating  
DrainSource Voltage  
GateSource Voltage  
Symbol  
Value  
25  
Unit  
Vdc  
Vdc  
1 DRAIN  
V
DS  
V
GS  
25  
MARKING  
DIAGRAM  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
3
SOT−23  
CASE 318  
STYLE 10  
MxM  
1
THERMAL CHARACTERISTICS  
2
1
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation (Note 1)  
P
D
x
M
= 1 or 2  
= Date Code  
T = 25°C  
225  
1.8  
mW  
mW/°C  
A
Derate above 25°C  
Thermal Resistance,  
Junction−to−Ambient  
R
556  
°C/W  
q
JA  
ORDERING INFORMATION  
Total Device Dissipation Alumina  
P
D
Substrate, (Note 2) T = 25°C  
Derate above 25°C  
300  
2.4  
mW  
mW/°C  
A
Device  
Package  
Shipping  
BFR30LT1  
SOT−23  
3000/Tape & Reel  
3000/Tape & Reel  
Thermal Resistance,  
Junction−to−Ambient  
R
417  
°C/W  
q
JA  
BFR30LT1G  
SOT−23  
(Pb−Free)  
Junction and Storage Temperature  
T , T  
55 to +150  
°C  
J
stg  
BFR31LT1  
SOT−23  
3000/Tape & Reel  
3000/Tape & Reel  
1. Device mounted on FR4 glass epoxy printed circuit board using the  
recommended footprint.  
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.  
BFR31LT1G  
SOT−23  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
February, 2005 − Rev. 4  
BFR30LT1/D  
 

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