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SBG1030CT-T-F PDF预览

SBG1030CT-T-F

更新时间: 2024-01-01 05:22:06
品牌 Logo 应用领域
美台 - DIODES 整流二极管瞄准线功效
页数 文件大小 规格书
2页 46K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 30V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, D2PAK-3

SBG1030CT-T-F 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-263包装说明:R-PSSO-G2
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.8其他特性:FREE WHEELING DIODE, LOW POWER LOSS
应用:EFFICIENCY外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.55 V
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:125 A
元件数量:2相数:1
端子数量:2最高工作温度:125 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:30 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:40
Base Number Matches:1

SBG1030CT-T-F 数据手册

 浏览型号SBG1030CT-T-F的Datasheet PDF文件第2页 
SBG1030CT - SBG1045CT  
10A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER  
Features  
Schottky Barrier Chip  
Guard Ring Die Construction for  
Transient Protection  
Low Power Loss, High Efficiency  
High Surge Capability  
High Current Capability and Low Forward  
Voltage Drop  
E
D2PAK  
Min  
Max  
10.69  
15.88  
1.14  
2.79  
4.83  
1.40  
1.40  
9.25  
0.64  
2.92  
2.79  
Dim  
A
G
H
A
9.65  
14.60  
0.51  
2.29  
4.37  
1.14  
1.14  
8.25  
0.30  
2.03  
2.29  
4
Surge Overload Rating to 125A Peak  
B
For Use in Low Voltage, High Frequency  
Inverters, Free Wheeling, and Polarity  
Protection Applications  
Plastic Material: UL Flammability  
Classification Rating 94V-0  
C
J
B
D
1
2
3
E
G
H
M
Mechanical Data  
D
K
J
Case: D2PAK Molded Plastic  
Terminals: Solderable per MIL-STD-202,  
Method 208  
Polarity: See Diagram  
Marking: Type Number  
Weight: 1.7 grams (approx.)  
Mounting Position: Any  
C
L
K
L
PIN 1  
PIN 3  
PIN 2 & 4  
M
All Dimensions in mm  
@ TA = 25C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
SBG  
1030CT  
SBG  
1040CT  
SBG  
1045CT  
SBG  
1035CT  
Characteristic  
Symbol  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
30  
21  
35  
25  
40  
28  
45  
32  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
V
A
Average Rectified Output Current  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on rated load  
(JEDEC Method)  
@ TC = 95C  
10  
IFSM  
125  
A
Forward Voltage, per Element  
@ IF = 5.0A  
VFM  
IRM  
0.55  
V
Peak Reverse Current  
at Rated DC Blocking Voltage  
@ Tj = 25C  
@ Tj = 125C  
1.0  
50  
mA  
Cj  
Typical Junction Capacitance (Note 2)  
275  
3.0  
pF  
K/W  
C  
RJC  
Typical Thermal Resistance Junction to Case (Note 1)  
Operating and Storage Temperature Range  
Tj, TSTG  
-65 to +125  
Notes:  
1. Thermal resistance: junction to case mounted on heat sink.  
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
DS30092 Rev. B-2  
1 of 2  
SBG1030CT - SBG1045CT  

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