5秒后页面跳转
SB50-18K PDF预览

SB50-18K

更新时间: 2024-09-15 22:22:23
品牌 Logo 应用领域
三洋 - SANYO 二极管
页数 文件大小 规格书
3页 77K
描述
180V, 5A Rectifier

SB50-18K 技术参数

生命周期:Obsolete零件包装代码:TO-220MF
包装说明:R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.75
Is Samacsys:N其他特性:HIGH RELIABILITY
应用:POWER外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.85 V
JESD-30 代码:R-PSIP-T3最大非重复峰值正向电流:60 A
元件数量:2相数:1
端子数量:3最高工作温度:125 °C
最大输出电流:5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
认证状态:Not Qualified最大重复峰值反向电压:180 V
最大反向电流:400 µA最大反向恢复时间:0.04 µs
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子形式:THROUGH-HOLE
端子位置:SINGLEBase Number Matches:1

SB50-18K 数据手册

 浏览型号SB50-18K的Datasheet PDF文件第2页浏览型号SB50-18K的Datasheet PDF文件第3页 
Ordering number:EN2684B  
SB50-18K  
Schottky Barrier Diode (Twin Type · Cathode Common)  
180V, 5A Rectifier  
Applications  
Package Dimensions  
unit:mm  
· High frequency rectification (switching regulators,  
converters, choppers).  
1199B  
[SB50-18K]  
Features  
· Low forward voltage (V max=0.85V).  
F
· Fast reverse recovery time (trr max=40ns).  
· Low switching noise.  
· Low leakage current and high reliability due to  
highly reliable planar structure.  
A:Anode  
C:Cathode  
SANYO:TO-220MF  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
Repetitive Peak Reverse Voltage  
Nonrepetitive Peak Reverse Surge Voltage  
Average Output Current  
V
180  
190  
5
V
V
RRM  
V
RSM  
I
A
50Hz, resistive load, Tc=103˚C  
50Hz sine wave, 1 cycle  
O
Surge Forward Current  
I
60  
A
FSM  
˚C  
˚C  
Junction Temperature  
Tj  
–55 to +125  
–55 to +125  
Storage Temperature  
Tstg  
Electrical Characteristics  
Ratings  
typ  
Parameter  
Symbol  
Conditons  
Unit  
min  
180  
max  
Reverse Voltage  
V
R
V
F
V
V
I
=2mA, Tj=25˚C,*  
R
Forward Voltage  
0.85  
I =2A, Tj=25˚C, *  
F
Reverse Current  
I
V
=90V, Tj=25˚C, *  
0.4  
40  
mA  
ns  
R
R
Reverse Recovery Time  
Thermal Resistance  
trr  
I =2A, Tj=25˚C, *, –dI /dt=10A/µs  
F F  
Junction-Case:Smoothed DC  
Rthj-c  
2.5 ˚C/W  
Note*:Value per element  
Electrical Connection  
A:Anode  
C:Cathode  
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
41098HA (KT)/D218MO/3088TA, TS No.2684-1/3  

与SB50-18K相关器件

型号 品牌 获取价格 描述 数据表
SB502 DEC

获取价格

5 AMP SILICON BRIDGE RECTIFIERS
SB5023100YL ABC

获取价格

SMD POWER INDUCTOR
SB5023101YL ABC

获取价格

SMD POWER INDUCTOR
SB5023102YL ABC

获取价格

SMD POWER INDUCTOR
SB5023220YL ABC

获取价格

SMD POWER INDUCTOR
SB5023221YL ABC

获取价格

SMD POWER INDUCTOR
SB50232R2YL ABC

获取价格

SMD POWER INDUCTOR
SB50233R3YL ABC

获取价格

SMD POWER INDUCTOR
SB5023470YL ABC

获取价格

SMD POWER INDUCTOR
SB5023471YL ABC

获取价格

SMD POWER INDUCTOR