Datasheet > SB3200

SB3200

更新时间： 2024-11-24 17:15:19

品牌	Logo	应用领域
浩畅 - HC		/
页数	文件大小	规格书
2页	697K
描述
DO-27

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中文翻译

获取价格

数据手册

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SB3200 数据手册

SB320 THRU SB3200

SCHOTTKY BARRIER RECTIFIER

3.0 Amperes

Reverse Voltage - 20 to 200 Volts Forward Current -

DO-201AD

FEATURES

The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

Metal silicon junction,majority carrier conduction

Low power loss,high efficiency

1.0 (25.4)

MIN.

High forward surge current capability

High temperature soldering guaranteed:

0.220(5.6)

0.197(5.0)

DIA.

250 C/10 seconds,0.375”(9.5mm) lead length,

5 lbs. (2.3kg) tension

0.375 (9.50)

0.285(7.20)

1.0 (25.4)

MIN.

MECHANICAL DATA

Case: JEDEC DO-201AD molded plastic body

Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

0.052 (1.3)

0.048 (1.2)

DIA.

Polarity: Color band denotes cathode end

Mounting Position: Any

Dimensions in inches and (millimeters)

Weight:0.04 ounce, 1.10 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

SB SB SB SB SB

370 380 390 3B0 3150

3200

SB SB SB SB SB

320 330 340 350 360

SYMBOLS

UNITS

TYPE NUMBER

Maximum repetitive peak reverse voltage

Maximum RMS voltage

20 30 40 50 60 70 80 90 100 150

14 21 28 35 42 49 56 63 70 105

20 30 40 50 60 70 80 90 100 150

VOLTS

200

140

200

VRRM

VRMS

VDC

Maximum DC blocking voltage

Maximum average forward rectified current

0.375”(9.5mm) lead length(see fig.1)

Peak forward surge current

I(AV)

3.0

Amps

IFSM

80.0

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Amps

0.55

250

0.70

0.85

0.95

Maximum instantaneous forward voltage at 3.0A

Volts

Maximum DC reverse current

at rated DC blocking voltage

TA=25 C

0.5

0.2

2.0

TA=100 C

20.0

10.0

160

Typical junction capacitance (NOTE 1)

C/W

Typical thermal resistance (NOTE 2)

Operating junction temperature range

RθJA

40.0

-65 to +125

-65 to +150

TJ,

Storage temperature range

TSTG

-65 to +150

Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted

浩畅半导体

RevK：M ay2014

www.szhaochang.cn

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