SB320B-G

更新时间： 2024-11-23 07:17:55

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描述
Leaded Schottky Barrier Rectifiers

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SB320B-G 数据手册

Leaded Schottky Barrier Rectifiers

Comchip

S M D D i o d e S p e c i a l i s t

SB320-G Thru. SB3100-G

Voltage: 20 to 100 V

Current: 3.0 A

RoHS Device

DO-201AD

Features

-Low drop down voltage.

1.0(25.4) Min.

-Metal-Semiconductor junction with guard ring

-High surge current capability

0.210(5.3)

0.189(4.8)

-Silicon epitaxial planar chips.

-For use in low voltage, high efficiency inverters,

free wheeling, and polarity protection applications

0.375(9.5)

0.287(7.3)

-Lead-free part, meet RoHS requirements.

1.0(25.4) Min.

Mechanical data

0.052(1.30)

0.048(1.20)

-Epoxy: UL94-V0 rated flame retardant

-Case: Molded plastic body DO-201AD

-Terminals: Solderable per MIL-STD-750 Method 2026

-Polarity: Color band denotes cathode end

-Mounting Position: Any

Dimensions in inches and (millimeter)

-Weight: 1.12grams

Electrical Characteristics (at TA=25°C unless otherwise noted)

Ratings at 25°C ambient temperature unless otherwise specified.

Symbol

Parameter

Unit

340-G

320-G

345-G

350-G

360-G

380-G 3100-G

Maximum recurrent peak reverse voltage

Maximum RMS voltage

VRRM

VRMS

VDC

100

Maximum DC blocking voltage

100

Maximum average forward rectified current

0.375” (9.5mm) lead length at TA=100°C, See Figure 1

I(AV)

3.0

Peak forward surge current

8.3ms single half sine-wave superimposed on rated load

(JEDEC method) TL=110°C

IFSM

Maximum forward voltage at 3.0A

0.50

0.70

0.85

0.5

Maximum DC reverse current

At rated DC blocking voltage

=25°C

=100°C

Typical junction capacitance (Note 1)

Typical thermal resistance (Note 2)

250

RθJA

RθJL

40.0

20.0

°C/W

Operating junction temperature range

Storage temperature range

-55 to +125

-55 to +150

°C

TSTG

-55 to +150

NOTES:

1. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts.

2. Thermal resistance junction to ambient and junction to lead.

REV:B

Page 1

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Comchip Technology CO., LTD.

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