Datasheet > SB320-1.8

SB320-1.8

更新时间： 2022-12-20 16:36:18

品牌	Logo	应用领域
GSG		肖特基二极管
页数	文件大小	规格书
1页	52K
描述
Chips for Schottky Diodes

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SB320-1.8 数据手册

SB 3XX -1.8

Chips for Schottky Diodes

Chip Specification

General Description:

Schottky Diode chips with Mo-barrier for switch mode power

rectifiers with the following features:

* Guard-ring for stress protection

* Extremely low forward voltage

* 125 ℃ operation junction temperature

* reverse avalanche behavior

Mechanical Data:

SB 3XX passivated Silicon Chip

Demension(mm)

Thickness:

1,8x1,8

350 +- 20 µm

Metallization:

Top ( Anode ) :

Al Ag

Bottom ( Cathode) : TiNiAg

Forward Current(A)

3 A

Reverse Voltage (V):23, 43, 100 V

Type

Chip

V^R(V)

VF(V)@25 C I^RM@V^RMM

size(mm)

1,8x1,8

at If=1A

at 25 C

SB320

SB340

SB3100

23 V

43 V

100 V

440mV

600mV

690mV

0,5mA

Note: Other voltages, Vf & Top Metal AL are available

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