Datasheet > SB3200

SB3200

更新时间： 2024-11-24 14:53:07

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	2784K
描述
DO-27

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中文翻译

获取价格

数据手册

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SB3200 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

DO-27 Plastic-Encapsulate Diodes

Schottky Rectifier Diode

SB3150 THRU SB3200

Features

●

I_F(AV)

DO-27

VRRM

150V-20V

High surge current capability

Polarity: Color band denotes cathode

● Low peak forward voltage

Applications

●

Rectifier

Marking

●

SB3150/SB3200

Limiting Values(Absolute Maximum Rating)

SB3

Item

Symbol

Unit

Test Conditions

200

140

150

V_RRM

Repetitive Peak Reverse Voltage

MaximumRMS Voltage

150

105

150

RMS

200

MaximumDC Blocking Voltage

60HZ Half-sine wave, Resistance

load, TL=100℃

I_F(AV)

Average Forward Current

3.0

Surge(Non-repetitive)Forward

Current

60Hz Half-sine wave ,1 cycle ,

Ta =25℃

I_FSM

T_J

℃

Junction Temperature

Storage Temperature

-55~+150

T_STG

-55 ~ +150

Electrical Characteristics (T=25℃ Unless otherwise specified）

SB3

Item

Test Condition

Symbol Unit

150

200

MaximumPeak Forward Voltage

MaximumPeak Reverse Current

Typical Junction Capacitance

V_FM

I_FM=3.0A

0.95

0.85

I_RRM1

I_RRM2

T =25℃

0.1

V_RM=V_RRM

T =100℃

2.0

Measured at 1MHz and applied

reverse voltage of 4.0V D.C.

160

R_θ

Between junction and ambient

Between junction and lead

J-A

Typical Thermal Resistance

℃/W

R_θ

J-L

www.jscj-elec.com

Rev. - 1.0

12 3 4

中文翻译

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