Datasheet > SB2520CT_10

SB2520CT_10

更新时间： 2024-11-11 08:53:59

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
2页	50K
描述
SCHOTTKY BARRIER RECTIFIERS

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数据手册

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SB2520CT_10 数据手册

SB2520CT SERIES

SCHOTTKY BARRIER RECTIFIERS

CURRENT

VOLTAGE

20 to 60 Volts

25 Amperes

FEATURES

0.419(10.66)

0.387(9.85)

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O.

0.196(5.00)

0.163(4.16)

0.139(3.55)

MIN.

0.054(1.39)

0.045(1.15)

Flame Retardant Epoxy Molding Compound.

• Exceeds environmental standards of MIL-S-19500/228

• Low power loss, high efficiency.

• Low forward voltage, high current capability

• High surge capacity.

• For use in low voltage,high frequency inverters

free wheeling , and polarlity protection applications.

• In compliance with EU RoHS 2002/95/EC directives

0.115(2.92)

0.080(2.03)

0.058(1.47)

0.042(1.07)

0.038(0.96)

0.019(0.50)

0.025(0.65)MAX.

MECHANCEAL DATA

• Case: TO-220AB Molded plastic

• Terminals: Solder plated, solderable per MIL-STD-750, Method 2026

• Polarity: As marked.

0.100(2.54)

• Standard packaging: Any

• Weight: 0.0655 ounces, 1.859 grams.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

SB2520CT SB2530CT SB2540CT SB2545CT SB2550CT SB2560CT

PARAMETER

SYMBOL

V_RRM

UNITS

Maximum Recurrent Peak Reverse Voltage

31.5

Maximum RMS Voltage

V_RMS

Maximum DC Blocking Voltage

V_DC

Maximum Average Forward Current at

Tc =75 ^OC

I_F(AV)

25.0

200

Peak Forward Surge Current :8.3ms single

half sine-wave superimposed on rated load

(JEDEC method)

I_FSM

V_F

I_R

Maximum Forward Voltage at 12.5A per leg

0.55

0.75

Maximum DC Reverse Current at

Rated DC Blocking Voltage

T_J=25 ^OC

T_J=100^OC

0.2

100

Typical Thermal Resistance

R_JC

^OC / W

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 to +125

-55 to +150

^OC

T_STG

-55 to +150

NOTE:

Both Bonding and Chip structure are available.

August 25,2010-REV.03

PAGE . 1

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