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SB2520DC-T3-LF PDF预览

SB2520DC-T3-LF

更新时间： 2024-11-12 04:19:47
品牌 Logo 应用领域
WTE 功效瞄准线二极管
页数 文件大小 规格书
4页 44K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 12.5A, 20V V(RRM), Silicon, TO-263AB, TO-263, D2PAK-3/2

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SB2520DC-T3-LF 数据手册

 浏览型号SB2520DC-T3-LF的Datasheet PDF文件第2页浏览型号SB2520DC-T3-LF的Datasheet PDF文件第3页浏览型号SB2520DC-T3-LF的Datasheet PDF文件第4页 
®
SB2520DC – SB25100DC  
25A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER  
WON-TOP ELECTRONICS  
Features  
Low Forward Voltage  
C
Epitaxial Construction with Oxide Passivation  
Guard Ring for Transient and ESD Protection  
Surge Overload Rating to 200A Peak  
Low Power Loss, High Efficiency  
Fast Switching  
For Use in Low Voltage, High Frequency  
Inverters, Free Wheeling, and Switching  
Power Supplies  
A
J
B
D
E
PIN 1  
2
3
G
H
K
P
P
D2 PAK/TO-263  
Mechanical Data  
Dim  
A
Min  
9.80  
9.60  
4.40  
8.50  
—
Max  
10.40  
10.60  
4.80  
9.10  
2.80  
1.40  
0.99  
1.40  
0.70  
2.75  
Case: D2PAK/TO-263, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
B
C
D
Polarity: See Diagram  
Weight: 1.7 grams (approx.)  
Mounting Position: Any  
Marking: Type Number  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
PIN 1  
PIN 3  
E
Case, PIN 2  
G
H
1.00  
—
J
1.20  
0.30  
2.35  
K
P
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.  
SB  
SB  
SB  
SB  
SB  
SB  
SB  
SB  
Characteristic  
Symbol  
Unit  
2520DC 2530DC 2540DC 2545DC 2550DC 2560DC 2580DC 25100DC  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
20  
14  
30  
21  
40  
28  
45  
32  
50  
35  
60  
42  
80  
56  
100  
70  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
V
A
Average Rectified Output Current  
@TC = 100°C  
Total Device  
Per Diode  
25  
12.5  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed  
on Rated Load (JEDEC Method)  
IFSM  
VFM  
200  
A
V
Forward Voltage  
per diode  
@IF = 12.5A, TJ = 25°C  
@IF = 12.5A, TJ = 125°C  
0.62  
0.57  
0.75  
0.65  
0.85  
0.75  
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TJ = 25°C  
@TJ = 100°C  
1.0  
20  
IRM  
CJ  
mA  
pF  
Typical Junction Capacitance (Note 1)  
750  
500  
Thermal Resistance Junction to Ambient (Note 2)  
Thermal Resistance Junction to Case (Note 2)  
RθJA  
RθJC  
55  
1.5  
°C/W  
°C  
Operating and Storage Temperature Range  
TJ, TSTG  
-55 to +150  
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
2. Mounted on FR-4 PCB with minimum recommended pad layout per diode.  
© Won-Top Electronics Co., Ltd.  
Revision: September, 2012  
www.wontop.com  
1
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