SB2100EA-G

更新时间： 2024-11-23 12:46:55

品牌	Logo	应用领域
上华 - COMCHIP		/
页数	文件大小	规格书
3页	77K
描述
ESD Leaded Schottky Barrier Rectifiers

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SB2100EA-G 数据手册

ESD Leaded Schottky Barrier Rectifiers

SB220E-G Thru. SB2100E-G

Voltage: 20 to 100 V

Current: 2.0 A

RoHS Device

DO-15

Features

-Low drop down voltage.

-For use in low voltage, high frequency invertors free

wheeling and polarity protection.

1.0(25.4) Min.

0.142(3.6)

0.102(2.6)

-Silicon epitaxial planar chips.

-ESD test under IEC6100-4-2 :

Standard: >15KV(Air) & 8KV(Contact)

0.299(7.6)

0.228(5.8)

Mechanical data

-Epoxy: UL94V-0 rated flame retardant

-Case: Molded plastic body DO-15

-Terminals: Solderable per MIL-STD-750 Method 2026

-Polarity: Color band denotes cathode end

-Mounting Position: Any

1.0(25.4) Min.

0.034(0.86)

0.028(0.70)

Dimensions in inches and (millimeter)

-Weight: 0.4grams

Maximum Ratings and Electrical Characteristics

Ratings at 25°C ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Symbol

Parameter

Unit

220E-G 240E-G 245E-G 250E-G 260E-G 280E-G 2100E-G

Maximum recurrent peak reverse voltage

Maximum RMS voltage

VRRM

VRMS

VDC

100

Maximum DC blocking voltage

100

Maximum average forward rectified current

0.375” (9.5mm) lead length at TA=75°C, See Figure 1

I(AV)

2.0

Peak forward surge current

8.3ms single half sine-wave superimposed on rated load

(JEDEC method) TL=110°C

IFSM

Maximum forward voltage at 2.0A (Note 1)

0.50

0.70

0.85

0.5

Maximum DC reverse current

At rated DC blocking voltage

=25°C

A=100°C

Typical junction capacitance (Note 2)

Typical thermal resistance (Note 3)

170

RθJA

RθJL

50.0

25.0

°C/W

Operating junction temperature range

Storage temperature range

-65 to +125

-65 to +150

°C

TSTG

-65 to +150

NOTES:

1. Pulse test : 300µS pulse width, 1% duty cycle.

2. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts.

3. Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted 0.375” (9.5mm) lead length

Company reserves the right to improve product design , functions and reliability without notice.

REV:A

Page 1

QW-BB058

Comchip Technology CO., LTD.

12 3

中文翻译

下载PDF

与SB2100EA-G相关器件

型号	品牌	获取价格	描述	数据表
SB2100EB-G	COMCHIP	获取价格	ESD Leaded Schottky Barrier Rectifiers
SB2100ET-G	COMCHIP	获取价格	ESD Leaded Schottky Barrier Rectifiers
SB2100H	ZOWIE	获取价格	SCHOTTKY BARRIER RECTIFIER
SB2100H	SIRECT	获取价格	Power Schottky Rectifier - 2Amp 40~100Volt
SB2100H	PANJIT	获取价格	SCHOTTKY BARRIER RECTIFIERS
SB2100L	CZSTARSEA	获取价格	DO-15
SB2100S	WTE	获取价格	2.0A SCHOTTKY BARRIER DIODE
SB2100S	SIRECT	获取价格	Power Schottky Rectifier - 2Amp 40~100Volt
SB2100S	PANJIT	获取价格	DO-41
SB2100S	WON-TOP	获取价格	Axial