SB2100S-TB

更新时间： 2024-11-19 04:05:47

品牌	Logo	应用领域
WTE		整流二极管肖特基二极管瞄准线功效
页数	文件大小	规格书
4页	54K
描述
2.0A SCHOTTKY BARRIER DIODE

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中文翻译

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数据手册

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SB2100S-TB 数据手册

WTE

POWER SEMICONDUCTORS

SB220S – SB2100S

2.0A SCHOTTKY BARRIER DIODE

Features

Schottky Barrier Chip

Guard Ring Die Construction for

Transient Protection

High Current Capability

Low Power Loss, High Efficiency

High Surge Current Capability

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

Protection Applications

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ D

Mechanical Data

DO-41

Dim

Min

25.4

4.06

0.71

2.00

Max

Case: DO-41, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Weight: 0.34 grams (approx.)

Mounting Position: Any

Marking: Type Number

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

—

5.21

0.864

2.72

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

220S

230S

240S

250S

260S

Characteristic

Symbol

Unit

280S 2100S

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

RMS Reverse Voltage

V^R(RMS)

I^O

Average Rectified Output Current @T_L= 100°C

(Note 1)

2.0

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method)

I^FSM

Forward Voltage

@I_F= 2.0A

V^FM

I^RM

0.50

170

0.70

0.85

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

0.5

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 1)

Operating and Storage Temperature Range

C^j

140

°C/W

°C

R^ꢀ^JA

T^j, T^STG

-65 to +150

Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

SB220S – SB2100S

1 of 4

12 3 4

中文翻译

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与SB2100S-TB相关器件

型号	品牌	获取价格	描述	数据表
SB2100S-TB-LF	WTE	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-41, ROHS COMPL
SB2100-T3	WTE	获取价格	2.0A SCHOTTKY BARRIER DIODE
SB2100-T3-LF	WTE	获取价格	暂无描述
SB2100-TB	WTE	获取价格	2.0A SCHOTTKY BARRIER DIODE
SB2100-TB-LF	WTE	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-15, ROHS COMPL
SB2100T-G	COMCHIP	获取价格	Leaded Schottky Barrier Rectifiers
SB210S	SECOS	获取价格	Voltage 20V ~100V 2.0Amp Schottky Barrier Bridge Rectifers
SB2150	SIRECT	获取价格	Power Schottky Rectifier - 2Amp 150~200Volt
SB2150	CTC	获取价格	SCHOTTKY BARRIER RECTIFIERS (DO-15)
SB2150	MDD	获取价格	SCHOTTKY BARRIER RECTIFIER

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