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SB2150 PDF预览

SB2150

更新时间: 2023-12-06 20:02:02
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
4页 1211K
描述
DO-15

SB2150 数据手册

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  
DO-15 Plastic-Encapsulate Diodes  
Schottky Rectifier Diodes  
Features  
I
F(AV)  
2A  
DO-15  
VRRM  
150V-200V  
High surge current capability  
Polarity: Color band denotes cathode  
Applications  
Rectifier  
Marking  
SB2150:SB2150  
SB2200:SB2200  
SB2  
Item  
Symbol  
Unit  
Conditions  
150  
200  
Repetitive Peak Reverse Voltage  
MaximumRMS Voltage  
VRRM  
V
V
150  
200  
105  
150  
140  
200  
VRMS  
VDC  
MaximumDC blocking Voltage  
V
A
60Hz Half-sine wave  
Resistance loadTL=100  
IF(AV)  
Average Forward Current  
2.0  
Surge(Non-repetitive)Forward  
Current  
60Hz Half-sine wave  
1 cycleTa=25℃  
IFSM  
A
60  
Junction Temperature  
Storage Temperature  
TJ  
-55 ~ +150  
-55 ~ +150  
TSTG  
Electrical Characteristics (T =25Unless otherwise specified  
a
SB2  
Symbol  
Item  
Unit  
V
Test Condition  
150  
200  
Maximum Peak Forward Voltage  
VFM  
IFM=2.0A  
0.95  
0.85  
IRRM1  
IRRM2  
0.2  
2.0  
T =25  
a
Maximum Peak Reverse Current  
Typical Junction Capacitance  
mA  
RM =VRRM  
V
T =100℃  
a
Measured at 1MHz and applied  
reverse voltage of 4.0V D.C.  
80  
50  
25  
CJ  
pF  
Rθ  
Between junction and ambient  
Between junction and lead  
J-A  
/W  
Typical Thermal Resistance  
Rθ  
J-L  
Rev. - 1.0  
1
www.jscj-elec.com  

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