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SB20H150CT-1E3 PDF预览

SB20H150CT-1E3

更新时间： 2024-01-31 22:50:16
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 289K
描述
DIODE 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-262AA, LEAD FREE, PLASTIC PACKAGE-3, Rectifier Diode

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中文翻译

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SB20H150CT-1E3 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active零件包装代码：TO-262AA
包装说明：LEAD FREE, PLASTIC PACKAGE-3针数：3
Reach Compliance Code：unknown风险等级：5.73
Is Samacsys：NBase Number Matches：1

SB20H150CT-1E3 数据手册

 浏览型号SB20H150CT-1E3的Datasheet PDF文件第2页浏览型号SB20H150CT-1E3的Datasheet PDF文件第3页浏览型号SB20H150CT-1E3的Datasheet PDF文件第4页浏览型号SB20H150CT-1E3的Datasheet PDF文件第5页 
MBR20H150CT, MBRF20H150CT & SB20H150CT-1  
Vishay Semiconductors  
Dual Common-Cathode High-Voltage Schottky Rectifier  
Low Leakage Current 5.0 µA  
TO-220AB  
ITO-220AB  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
VF  
2 x 10 A  
150 V  
3
3
2
2
1
1
200 A  
MBR10H150CT  
MBRF10H150CT  
0.75 V  
175 °C  
TO-262AA  
Tj  
Features  
3
2
• Guardring for overvoltage protection  
• Low power loss, high efficiency  
• Low forward voltage drop  
1
SB10H150CT-1  
PIN 1  
PIN 3  
PIN 2  
CASE  
• High frequency operation  
• Solder Dip 260 °C, 40 seconds  
Mechanical Data  
Typical Applications  
Case: TO-220AB, ITO-220AB, TO-262AA  
Epoxy meets UL-94V-0 Flammability rating  
For use in high frequency inverters, free wheeling and  
polarity protection applications  
Terminals: Matte Tin plated (E3 Suffix) leads, solder-  
able per J-STD-002B and JESD22-B102D  
Mounting Torque: 10 in-lbs maximum  
Polarity: As marked  
Maximum Ratings  
(TC = 25 °C, unless otherwise noted)  
Parameter  
Symbol  
VRRM  
VRWM  
VDC  
MBR20H150CT  
Unit  
V
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum DC blocking voltage  
150  
150  
150  
V
V
Maximum average forward rectified current  
Total device  
Per leg  
IF(AV)  
20  
10  
A
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load per leg  
Peak repetitive reverse current per leg at tp = 2 µs, 1 KHz  
IFSM  
200  
A
IRRM  
ERSM  
EAS  
1.0  
10  
A
mJ  
mJ  
V/µs  
°C  
Peak non-repetitive reverse surge energy per leg (8/20 µs waveform)  
Non-repetitive avalanche energy per leg at 25 °C, IAS = 1.5 A, L = 10 mH  
Voltage rate of change (rated VR)  
11.25  
dv/dt  
10000  
- 65 to + 175  
1500  
Operating junction and storage temperature range  
TJ, TSTG  
VAC  
Isolation voltage (ITO-220AB only)  
V
From terminals to heatsink t = 1 minute  
Document Number 88864  
29-Aug-05  
www.vishay.com  
1
12345

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