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SB20H150CT-1E3/45 PDF预览

SB20H150CT-1E3/45

更新时间: 2024-11-01 06:10:07
品牌 Logo 应用领域
威世 - VISHAY 整流二极管瞄准线高压功效
页数 文件大小 规格书
5页 129K
描述
Dual Common-Cathode High-Voltage Schottky Rectifier

SB20H150CT-1E3/45 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:TO-262AA
包装说明:R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.71
Is Samacsys:N其他特性:FREE WHEELING DIODE, LOW POWER LOSS, LOW LEAKAGE CURRENT
应用:EFFICIENCY外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.99 V
JEDEC-95代码:TO-262AAJESD-30 代码:R-PSIP-T3
JESD-609代码:e3最大非重复峰值正向电流:200 A
元件数量:2相数:1
端子数量:3最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:150 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SB20H150CT-1E3/45 数据手册

 浏览型号SB20H150CT-1E3/45的Datasheet PDF文件第2页浏览型号SB20H150CT-1E3/45的Datasheet PDF文件第3页浏览型号SB20H150CT-1E3/45的Datasheet PDF文件第4页浏览型号SB20H150CT-1E3/45的Datasheet PDF文件第5页 
MBR20H150CT, MBRF20H150CT & SB20H150CT-1  
Vishay General Semiconductor  
Dual Common-Cathode High-Voltage Schottky Rectifier  
Low Leakage Current 5.0 µA  
FEATURES  
TO-220AB  
ITO-220AB  
• Guardring for overvoltage protection  
• Low power loss, high efficiency  
• Low forward voltage drop  
• High frequency operation  
3
• Solder dip 260 °C, 40 s  
3
2
2
1
1
MBR20H150CT  
TO-262AA  
MBRF20H150CT  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in high frequency inverters, freewheeling and  
polarity protection applications.  
3
2
1
SB20H150CT-1  
MECHANICAL DATA  
PIN 1  
PIN 3  
PIN 2  
CASE  
Case: TO-220AB, ITO-220AB, TO-262AA  
Epoxy meets UL 94V-0 flammability rating  
PRIMARY CHARACTERISTICS  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test  
IF(AV)  
VRRM  
IFSM  
VF  
2 x 10 A  
150 V  
200 A  
0.75 V  
175 °C  
Mounting Torque: 10 in-lbs maximum  
Polarity: As marked  
TJ  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL  
VRRM  
MBR20H150CT  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum DC blocking voltage  
150  
150  
150  
V
V
V
VRWM  
VDC  
total device  
Maximum average forward rectified current  
per diode  
20  
10  
IF(AV)  
A
A
Peak forward surge current 8.3 ms single half sine-wave superimposed  
on rated load per diode  
IFSM  
200  
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz  
Peak non-repetitive reverse surge energy per diode (8/20 µs waveform)  
Non-repetitive avalanche energy per diode at 25 °C, IAS = 1.5 A, L = 10 mH  
Voltage rate of change (rated VR)  
IRRM  
ERSM  
EAS  
1.0  
10  
A
mJ  
mJ  
V/µs  
°C  
11.25  
dV/dt  
TJ, TSTG  
VAC  
10 000  
- 65 to + 175  
1500  
Operating junction and storage temperature range  
Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 min  
V
Document Number: 88864  
Revision: 18-Apr-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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具有0.64mm方形接线柱的2.5sb头可用于将任何2.5mm插座连接到PC板。它们还可用