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SB20H200CT-1 PDF预览

SB20H200CT-1

更新时间: 2024-11-01 06:10:07
品牌 Logo 应用领域
威世 - VISHAY 整流二极管瞄准线高压功效
页数 文件大小 规格书
5页 128K
描述
Dual Common-Cathode High-Voltage Schottky Rectifier

SB20H200CT-1 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-262AA
包装说明:R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.46
Is Samacsys:N其他特性:FREE WHEELING DIODE, LOW POWER LOSS
应用:EFFICIENCY外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.75 V
JEDEC-95代码:TO-262AAJESD-30 代码:R-PSIP-T3
最大非重复峰值正向电流:290 A元件数量:2
相数:1端子数量:3
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:200 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SB20H200CT-1 数据手册

 浏览型号SB20H200CT-1的Datasheet PDF文件第2页浏览型号SB20H200CT-1的Datasheet PDF文件第3页浏览型号SB20H200CT-1的Datasheet PDF文件第4页浏览型号SB20H200CT-1的Datasheet PDF文件第5页 
MBR20H200CT, MBRF20H200CT & SB20H200CT-1  
Vishay General Semiconductor  
Dual Common-Cathode High-Voltage Schottky Rectifier  
Low Leakage Current 5.0 µA  
FEATURES  
TO-220AB  
ITO-220AB  
• Guarding for overvoltage protection  
• Low power loss, high efficiency  
• Low forward voltage drop  
• High frequency operation  
3
3
• Solder dip 260 °C, 40 s  
2
2
1
1
MBR20H200CT  
MBRF20H200CT  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TO-262AA  
TYPICAL APPLICATIONS  
For use in high frequency inverters, freewheeling and  
polarity protection applications.  
3
2
1
SB20H200CT-1  
MECHANICAL DATA  
PIN 1  
PIN 2  
CASE  
Case: TO-220AB, ITO-220AB, TO-262AA  
PIN 3  
Epoxy meets UL 94V-0 flammability rating  
PRIMARY CHARACTERISTICS  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test  
IF(AV)  
VRRM  
IFSM  
VF  
2 x 10 A  
200 V  
290 A  
0.75 V  
175 °C  
Mounting Torque: 10 in-lbs maximum  
Polarity: As marked  
TJ  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL  
VRRM  
MBR20H200CT  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum DC blocking voltage  
200  
200  
200  
V
V
V
VRWM  
VDC  
total device  
Maximum average forward rectified current  
per diode  
20  
10  
IF(AV)  
A
A
Peak forward surge current 8.3 ms single half sine-wave superimposed  
on rated load per diode  
IFSM  
290  
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz  
IRRM  
ERSM  
EAS  
1.0  
20  
20  
A
Peak non-repetitive reverse surge energy per diode (8/20 µs waveform)  
Non-repetitive avalanche energy per diode at 25 °C, IAS = 2.0 A, L = 10 mH  
mJ  
mJ  
Electrostatic discharge capacitor voltage  
human body model air discharge: C = 100 pF, R 0 1.5 kΩ  
VC  
25  
kV  
Voltage rate of change (rated VR)  
dV/dt  
TJ, TSTG  
VAC  
10 000  
- 65 to + 175  
1500  
V/µs  
°C  
Operating junction and storage temperature range  
Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 minute  
V
Document Number: 88786  
Revision: 18-Apr-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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