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SB20W05T PDF预览

SB20W05T

更新时间: 2024-11-18 22:43:31
品牌 Logo 应用领域
三洋 - SANYO 二极管
页数 文件大小 规格书
3页 83K
描述
50V, 2A Rectifier

SB20W05T 技术参数

生命周期:Obsolete包装说明:R-PSIP-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.74
Is Samacsys:N其他特性:HIGH RELIABILITY
应用:GENERAL PURPOSE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.55 VJESD-30 代码:R-PSIP-T3
最大非重复峰值正向电流:20 A元件数量:2
相数:1端子数量:3
最大输出电流:2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
认证状态:Not Qualified最大重复峰值反向电压:50 V
最大反向电流:200 µA最大反向恢复时间:0.02 µs
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子形式:THROUGH-HOLE
端子位置:SINGLEBase Number Matches:1

SB20W05T 数据手册

 浏览型号SB20W05T的Datasheet PDF文件第2页浏览型号SB20W05T的Datasheet PDF文件第3页 
Ordering number:EN4443A  
SB20W05T  
Schottky Barrier Diode (Twin Type · Cathode Common)  
50V, 2A Rectifier  
Applications  
Package Dimensions  
unit:mm  
· High frequency rectification (switching regulators,  
converters, choppers).  
1254A  
[SB20W05T]  
Features  
· Low forward voltage (V max=0.55V).  
F
· Fast reverse recovery time (trr max=20ns).  
· Low switching noise.  
· Low leakage current and high reliability due to  
highly reliable planar structure.  
1:Anode  
2:Cathode  
3:Anode  
4:Cathode  
trr Test Circuit  
SANYO:TP  
unit:mm  
1257A  
[SB20W05T]  
Electrical Connection  
1:Anode  
2:Cathode  
3:Anode  
4:Cathode  
SANYO:TP-FA  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C (Value per element)  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
Repetitive Peak Reverse Voltage  
Nonrepetitive Peak Reverse Surge Voltage  
Average Output Current  
V
50  
55  
2
V
V
RRM  
V
RSM  
I
A
50Hz resistive load, Tc=117˚C  
O
I
4
A
50Hz resistive load, Tc=110˚C, Total rating  
O
Surge Forward Current  
Junction Temperature  
Storage Temperature  
I
50Hz sine wave, 1 cycle  
20  
A
FSM  
Tj  
–55 to +125  
–55 to +125  
˚C  
˚C  
Tstg  
Electrical Characteristics at Ta = 25˚C (Value per element)  
Ratings  
typ  
Parameter  
Symbol  
Conditons  
Unit  
min  
50  
max  
Reverse Voltage  
Forward Voltage  
Reverse Current  
V
R
V
F
I
=1mA  
V
V
R
I =2A  
0.55  
F
I
V
V
=25V  
200  
µA  
R
R
Interterminal Capacitance  
C
=10V, f=1MHz  
120  
pF  
R
Reverse Recovery Time  
trr  
I =I =300mA, See specifaied Test Circuit.  
20  
ns  
F
R
Thermal Resistance (Junction-Ambient)  
Thermal Resistance (Junction-Case)  
Rth(j-a)  
Rth(j-c)  
90  
5
˚C/W  
˚C/W  
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
41098HA (KT)/53196GI/42094YH (KOTO) AX-8337 No.4443-1/3  

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