Datasheet > SB2100

SB2100

更新时间： 2023-12-06 20:03:23

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1607K
描述
DO-15

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中文翻译

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数据手册

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SB2100 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

DO-15 Plastic-Encapsulate Diodes

Schottky Rectifier Diodes

SB220 THRU SB2100

Features

● I_F(AV)

DO-15

● VRRM

20V-100V

● High surge current capability

●

Polarity: Color band denotes cathode

Applications

● Rectifier

Marking

● SB2XX

X From 20 To 100

Limiting Values(Absolute Maximum Rating)

SB2

20 30 40 50 60 80 100

Item

Symbol Unit

Test Conditions

V_RRM

V_RMS

V_DC

100

Repetitive Peak Reverse Voltage

MaximumRMS Voltage

100

Maximum DC Blocking Voltage

60Hz Half-sine wave，

Average Forward Current

2.0

I_F(AV)

Resistance load，

TL (Fig.1)

Surge(Non-repetitive)Forward

Current

60Hz Half-sine wave，

1 cycle，Ta=25℃

I_FSM

-55 ~ +125

-55 ~ +150

Junction Temperature

Storage Temperature

T_J

℃

-55 ~ +150

T_STG

Electrical Characteristics (T=25℃ Unless otherwise specified）

SB2

Symbol Unit

Test Condition

Item

20 30 40 50 60 80 100

V_F

I_F=2.0A

Maximum Peak Forward Voltage

0.55

0.7

0.85

I_RRM1

T =25℃

0.1

V_RM=V_RRM

Maximum Peak Reverse Current

Typical junction capacitance

I_RRM2

T =125℃

10.0

Measured at 1MHz and applied

reverse voltage of 4.0V D.C.

C_J

220

Between junction and ambient

Between junction and terminal

R_θ

J-A

Typical Thermal Resistance

℃/

R_θ

J-L

www.jscj-elec.com

Rev. - 1.0

12 3 4

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