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SB210 PDF预览

SB210

更新时间: 2024-11-19 04:05:47
品牌 Logo 应用领域
DEC /
页数 文件大小 规格书
2页 341K
描述
2 AMP SILICON BRIDGE RECTIFIERS

SB210 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:R-PSIP-W4针数:4
Reach Compliance Code:unknownHTS代码:8541.10.00.80
风险等级:5.27其他特性:UL RECOGNIZED
最小击穿电压:1000 V配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1 VJESD-30 代码:R-PSIP-W4
最大非重复峰值正向电流:60 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
认证状态:Not Qualified最大重复峰值反向电压:1000 V
最大反向电流:10 µA子类别:Bridge Rectifier Diodes
表面贴装:NO端子形式:WIRE
端子位置:SINGLE

SB210 数据手册

 浏览型号SB210的Datasheet PDF文件第2页 
DIOTEC ELECTRONICS CORP.  
18020 Hobart Blvd., Unit B  
Data Sheet No. BRSB-200-1C  
Gardena, CA 90248 U.S.A  
Tel.: (310) 767-1052 Fax: (310) 767-7958  
2 AMP SILICON BRIDGE RECTIFIERS  
MECHANICAL SPECIFICATION  
FEATURES  
ACTUAL SIZE OF  
SB2 PACKAGE  
SERIES SB200 - SB210  
PRV Ratings from 50 to 1000 Volts  
C
Surge overload rating to 60 Amps peak  
Reliable low cost molded plastic construction  
Ideal for printed circuit board applications  
DIOTEC 009  
D1  
SB208  
D
_
+
AC  
L
UL RECOGNIZED - FILE #E124962  
B1  
B
RoHS COMPLIANT  
A1  
A
MECHANICAL DATA  
Case: Molded Epoxy (UL Flammability Rating 94V-0)  
Terminals: Round silver plated pins  
Soldering: Per MIL-STD 202 Method 208 guaranteed  
Polarity: Marked on case  
Mounting Position: Any  
_
+
Weight: 0.1 Ounces (2.8 Grams)  
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS  
PARAMETER (TEST CONDITIONS)  
RATINGS  
SYMBOL  
UNITS  
SB  
SB  
SB  
SB  
SB  
SB  
SB  
Series Number  
200  
201  
202  
204  
206  
208  
210  
Maximum DC Blocking Voltage  
Maximum RMS Voltage  
V
V
V
I
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
2
600  
800  
1000  
420  
560  
700 VOLTS  
1000  
Maximum Peak Recurrent Reverse Voltage  
Average Forward Rectified Current @ T = 55 C  
100  
600  
800  
AMPS  
Peak Forward Surge Current. Single 60Hz Half-Sine Wave  
Superimposed on Rated Load (JEDEC Method). T = 150 C  
I
60  
Maximum Forward Voltage (Per Diode) at 1 Amp DC  
V
1.05  
VOLTS  
@ T = 25 C  
10  
Maximum Average DC Reverse Current  
At Rated DC Blocking Voltage  
mA  
I
@ T = 125 C  
500  
Junction to Ambient (Note 1)  
R
30  
Typical Thermal Resistance.  
°C/W  
Junction to Lead (Note 1)  
R
11  
Minimum Insulation Breakdown Voltage (Circuit to Case)  
V
VOLTS  
2400  
,T  
T
-55 to +150  
Operating and Storage Temperature Range  
°C  
E11  

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