5秒后页面跳转
SB20H150CT-45 PDF预览

SB20H150CT-45

更新时间: 2024-11-01 12:14:47
品牌 Logo 应用领域
科盛美 - KERSEMI 高压
页数 文件大小 规格书
4页 1566K
描述
Dual Common-Cathode High-Voltage Schottky Rectifier

SB20H150CT-45 数据手册

 浏览型号SB20H150CT-45的Datasheet PDF文件第2页浏览型号SB20H150CT-45的Datasheet PDF文件第3页浏览型号SB20H150CT-45的Datasheet PDF文件第4页 
MBR20H150CT, MBRF20H150CT & SB20H150CT-1  
Dual Common-Cathode High-Voltage Schottky Rectifier  
FEATURES  
TO-220AB  
ITO-220AB  
• Guardring for overvoltage protection  
• Low power loss, high efficiency  
• Low forward voltage drop  
• High frequency operation  
3
• Solder dip 260 °C, 40 s  
3
2
2
1
1
MBR20H150CT  
TO-262AA  
MBRF20H150CT  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in high frequency inverters, freewheeling and  
polarity protection applications.  
3
2
1
SB20H150CT-1  
MECHANICAL DATA  
PIN 1  
PIN 3  
PIN 2  
CASE  
Case: TO-220AB, ITO-220AB, TO-262AA  
Epoxy meets UL 94V-0 flammability rating  
PRIMARY CHARACTERISTICS  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test  
IF(AV)  
VRRM  
IFSM  
VF  
2 x 10 A  
150 V  
200 A  
0.75 V  
175 °C  
Mounting Torque: 10 in-lbs maximum  
Polarity: As marked  
TJ  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL  
VRRM  
MBR20H150CT  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum DC blocking voltage  
150  
150  
150  
V
V
V
VRWM  
VDC  
total device  
Maximum average forward rectified current  
per diode  
20  
10  
IF(AV)  
A
A
Peak forward surge current 8.3 ms single half sine-wave superimposed  
on rated load per diode  
IFSM  
200  
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz  
Peak non-repetitive reverse surge energy per diode (8/20 µs waveform)  
Non-repetitive avalanche energy per diode at 25 °C, IAS = 1.5 A, L = 10 mH  
Voltage rate of change (rated VR)  
IRRM  
ERSM  
EAS  
1.0  
10  
A
mJ  
mJ  
V/µs  
°C  
11.25  
dV/dt  
TJ, TSTG  
VAC  
10 000  
- 65 to + 175  
1500  
Operating junction and storage temperature range  
Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 min  
V
www.kersemi.com  
1

与SB20H150CT-45相关器件

型号 品牌 获取价格 描述 数据表
SB20H200CT-1 VISHAY

获取价格

Dual Common-Cathode High-Voltage Schottky Rectifier
SB20H200CT-1 KERSEMI

获取价格

Guarding for overvoltage protection
SB20H200CT-1E3 VISHAY

获取价格

DIODE 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-262AA, LEAD FREE, PLASTIC PACKAGE-3, Recti
SB20H200CT-1-E3 VISHAY

获取价格

DIODE 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-262AA, LEAD FREE, PLASTIC PACKAGE-3, Recti
SB20H200CT-1E3/45 VISHAY

获取价格

Dual Common-Cathode High-Voltage Schottky Rectifier
SB20M045 JSMC

获取价格

SCHOTTKY BARRIER DIODE
SB20M045E JSMC

获取价格

SCHOTTKY BARRIER DIODE
SB20M045ER JSMC

获取价格

SCHOTTKY BARRIER DIODE
SB20P-HVQ-15 JST

获取价格

具有0.64mm方形接线柱的2.5sb头可用于将任何2.5mm插座连接到PC板。它们还可用
SB20P-HVQ-16 JST

获取价格

具有0.64mm方形接线柱的2.5sb头可用于将任何2.5mm插座连接到PC板。它们还可用