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SB160T26A PDF预览

SB160T26A

更新时间: 2024-11-26 03:19:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 二极管
页数 文件大小 规格书
3页 43K
描述
Rectifier Diode, Schottky, 1 Element, 1A, 60V V(RRM), Silicon, DO-41

SB160T26A 技术参数

生命周期:Obsolete包装说明:O-PALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.06
其他特性:FREE WHEELING DIODE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-41
JESD-30 代码:O-PALF-W2元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-65 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM最大功率耗散:1.25 W
认证状态:Not Qualified最大重复峰值反向电压:60 V
表面贴装:NO技术:SCHOTTKY
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

SB160T26A 数据手册

 浏览型号SB160T26A的Datasheet PDF文件第2页浏览型号SB160T26A的Datasheet PDF文件第3页 
SB120 - SB1100  
Features  
1.0 ampere operation at TA = 75°C  
with no thermal runaway.  
For use in low voltage, high frequency  
inverters free wheeling, and polarity  
protection applications.  
DO-41  
COLOR BAND DENOTES CATHODE  
Schottky Rectifiers  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Value  
Symbol  
Parameter  
Units  
120 130 140 150 160 180 1100  
VRRM  
IF(AV)  
Maximum Repetitive Reverse Voltage  
20  
30  
40  
50  
60  
80  
100  
V
A
Average Rectified Forward Current  
.375 " lead length @ TA = 75°C  
Non-repetitive Peak Forward Surge Current  
8.3 ms Single Half-Sine-Wave  
1.0  
IFSM  
30  
A
Storage Temperature Range  
-65 to +125  
-65 to +125  
°C  
°C  
Tstg  
TJ  
Operating Junction Temperature  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Thermal Characteristics  
Symbol  
Parameter  
Value  
Units  
PD  
Power Dissipation  
Thermal Resistance, Junction to Ambient  
1.25  
80  
W
RθJA  
C/W  
°
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Device  
Symbol  
Parameter  
Units  
120 130 140 150 160 180 1100  
500 700 850  
0.5  
VF  
IR  
Forward Voltage @ 1.0 A  
mV  
mA  
mA  
Reverse Current @ rated VR  
TA = 25°C  
TA = 100°C  
10  
Irr  
Maximum Full Load Reverse Current, Full Cycle  
TA = 75°C  
30  
mA  
Total Capacitance  
110  
pF  
CT  
VR = 4.0 V, f = 1.0 MHz  
2001 Fairchild Semiconductor Corporation  
SB120-SB1100, Rev. C  

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