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SB160-TB-LF PDF预览

SB160-TB-LF

更新时间： 2024-11-25 18:35:03
品牌 Logo 应用领域
WTE 瞄准线二极管
页数 文件大小 规格书
4页 60K
描述
Rectifier Diode, Schottky, 1 Element, 1A, 60V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2

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中文翻译

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SB160-TB-LF 数据手册

 浏览型号SB160-TB-LF的Datasheet PDF文件第2页浏览型号SB160-TB-LF的Datasheet PDF文件第3页浏览型号SB160-TB-LF的Datasheet PDF文件第4页 
WTE  
POWER SEMICONDUCTORS  
Pb  
SB120 – SB1100  
1.0A SCHOTTKY BARRIER DIODE  
Features  
!
!
Schottky Barrier Chip  
Guard Ring Die Construction for  
Transient Protection  
!
!
!
!
High Current Capability  
A
B
A
Low Power Loss, High Efficiency  
High Surge Current Capability  
For Use in Low Voltage, High Frequency  
Inverters, Free Wheeling, and Polarity  
Protection Applications  
C
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ D  
Mechanical Data  
DO-41  
Dim  
A
Min  
25.4  
4.06  
0.71  
2.00  
Max  
!
!
Case: DO-41, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: Cathode Band  
Weight: 0.34 grams (approx.)  
Mounting Position: Any  
Marking: Type Number  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
—
B
5.21  
0.864  
2.72  
C
!
!
!
!
!
D
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Symbol SB120 SB130 SB140 SB150 SB160 SB180 SB1100 Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
20  
14  
30  
21  
40  
28  
50  
60  
42  
80  
56  
100  
70  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
35  
V
A
Average Rectified Output Current @TL = 100°C  
(Note 1)  
1.0  
Non-Repetitive Peak Forward Surge Current 8.3ms  
Single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
40  
A
Forward Voltage  
@IF = 1.0A  
VFM  
IRM  
Cj  
0.50  
110  
0.70  
0.85  
V
mA  
pF  
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 100°C  
0.5  
10  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 1)  
Operating and Storage Temperature Range  
80  
RꢀJL  
RꢀJA  
15  
50  
°C/W  
°C  
Tj, TSTG  
-65 to +150  
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
SB120 – SB1100  
1 of 4  
© 2006 Won-Top Electronics  
1234

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