Datasheet > SB1100-0.9

SB1100-0.9

更新时间： 2024-01-28 23:57:42

品牌	Logo	应用领域
GSG		肖特基二极管
页数	文件大小	规格书
1页	59K
描述
Chips for Schottky Diodes

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数据手册

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SB1100-0.9 数据手册

SB 1XX - 0.9

Chips for Schottky Diodes

Chip Specification

General Description:

Schottky Diode chips with Mo-barrier for switch mode power

rectifiers with the following features:

* Guard-ring for stress protection

* Extremely low forward voltage

* 125 ℃ operation junction temperature

* reverse avalanche behavior

Mechanical Data:

SB 1XX passivated Silicon Chip

Demension(mm)

Thickness:

0.9x0.9

350 +- 20 µm

Metallization:

Top ( Anode ) :

Al Ag

Bottom ( Cathode) : TiNiAg

Forward Current(A)

1 A

Reverse Voltage (V):23, 43, 100 V

Type

Chip

V^R(V)

VF(V)@25 C I^RM@V^RMM

size(mm)

0.9x0.9

at If=1A

400mV

500mV

730mV

at 25 C

0,5mA

SB120

SB140

SB1100

23V

43 V

100 V

Note: Other voltages, Vf & Top Metal AL are available

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与SB1100-0.9相关器件

型号	品牌	获取价格	描述	数据表
SB1100-1.1	GSG	获取价格	Chips for Schottky Diodes
SB1100-1.3	GSG	获取价格	Chips for Schottky Diodes
SB1100-A	DIODES	获取价格	1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
SB1100A-G	COMCHIP	获取价格	Leaded Schottky Barrier Rectifiers
SB1100-B	DIODES	获取价格	1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
SB1100B-G	COMCHIP	获取价格	Leaded Schottky Barrier Rectifiers
SB1100E	SIRECT	获取价格	Power Schottky Rectifier - 1Amp 40~100Volt
SB1100-E	LRC	获取价格	Schottky Barrier Rectifiers Reverse Voltage 20 to 100V Forward Current 1.0A
SB1100E-G	COMCHIP	获取价格	Low VF/ESD Leaded Schottky Barrier Rectifiers
SB1100H	SIRECT	获取价格	Power Schottky Rectifier - 1Amp 40~100Volt