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SB10T150L PDF预览

SB10T150L

更新时间: 2024-11-02 01:05:07
品牌 Logo 应用领域
圣诺 - SENO /
页数 文件大小 规格书
3页 328K
描述
10A SURFACE MOUNT SCHOTTKY BARRIER DIODE

SB10T150L 数据手册

 浏览型号SB10T150L的Datasheet PDF文件第2页浏览型号SB10T150L的Datasheet PDF文件第3页 
Zibo Seno Electronic Engineering Co., Ltd.  
SB10T80L-SB10T200L  
10A SURFACE MOUNT SCHOTTKY BARRIER DIODE  
Features  
!
!
!
Schottky Barrier Chip  
Bypass Diodes for Solar Panels  
High Junction Temperture  
High Thermal Reliability  
Patented Super Barrier Rectifier Technology  
High Foward Surge Capability  
Ultra Low Power Loss, High Efficiency  
Excellent High Temperature Stability  
!
!
!
!
!
Top View  
Bottom View  
LEFT PIN  
BOTTOMSIDE  
HEAT SINK  
RIGHT PIN  
Mechanical Data  
Note: Pins Left & Right must  
be electrically connected  
at the printed circuit board.  
!
!
Case:TO-277B Molded Plastic "Green" Molding Compound  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
!
Polarity: Cathode Band  
!
!
Mounting Position: Any  
Marking: Type Number  
Lead Free: For RoHS/Lead Free Version  
!
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
SB  
SB  
SB  
SB  
SB  
Parameter  
Symbol  
Unit  
V
10T80L  
10T150L  
10T200L  
10T100L  
10T120L  
VRRM  
VRWM  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC blocking voltage  
80  
56  
100  
120  
150  
200  
140  
VDC  
VR(RMS)  
IO  
84  
105  
70  
RMS Rectified Voltage  
V
A
Average Rectified Output Current  
(Note1)  
10  
Non-Repetitive Peak Forward Surge8.3ms  
IFSM  
150  
Single Half Sine-Wave Superimposed on rated  
load(JEDEC Method)  
(Note2)  
A
I2 t Rating for Fusing (t < 8.3ms)  
I
2 t  
2s  
A
93.4  
Forward Voltage Drop  
Typ  
Typ  
Typ  
Typ  
Max.  
Max.  
Max.  
Max.  
-
@IF=1A  
@IF=5A  
@IF=10A  
TA =25  
TA =25  
-
-
-
-
-
0.40  
0.50  
0.47  
0.52  
0.61  
0.71  
0.66  
V
VFM  
0.55  
0.71 0.76  
0.90  
0.56 0.62 0.64 0.67 0.77 0.85 0.79 0.88  
T =25  
A
Peak Reverse Curent  
TA=25  
0.3  
15  
IR  
mA  
At Rated DC Blocking Voltage  
TA =100 ℃  
RθJA  
80  
15  
Typical Thermal Resistance  
Junctionto Ambient  
/W  
RθJL  
TJ  
Operating junction temperature range  
storage temperature range  
-55 to +150  
-55 to +150  
TSTG  
Note:1.Valid Provided that are kept at ambient temperature at a distance of 9.5mm from the case.  
m.  
2.Fr-4pcb.2oz.Copper,minimum recommend pad layout .18.8mm×14.4.Anode pad dimensions 5.6mm×14.4m  
www.senocn.com  
1 of 3  
SB10T80L-SB10T200L  

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