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SB10150F_08 PDF预览

SB10150F_08

更新时间: 2024-02-14 22:44:38
品牌 Logo 应用领域
WTE 高压
页数 文件大小 规格书
4页 63K
描述
10A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

SB10150F_08 数据手册

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WTE  
POWER SEMICONDUCTORS  
SB10150F – SB10200F  
10A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER  
Features  
Schottky Barrier Chip  
B
Guard Ring for Transient Protection  
Low Forward Voltage Drop  
Low Reverse Leakage Current  
High Surge Current Capability  
Plastic Material has UL Flammability  
Classification 94V-O  
ITO-220A  
C
Dim  
A
B
C
D
E
Min  
14.60  
9.70  
2.55  
3.56  
13.00  
0.30  
3.00 Ø  
6.30  
4.20  
2.50  
0.36  
2.90  
4.83  
Max  
15.40  
10.30  
2.85  
G
A
E
PIN1  
3
4.16  
D
13.80  
0.90  
F
G
H
I
3.50 Ø  
6.90  
Mechanical Data  
F
Case: ITO-220A, Full Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: See Diagram  
Weight: 2.24 grams (approx.)  
4.80  
P
J
2.90  
K
L
0.80  
I
3.30  
P
5.33  
Mounting Position: Any  
H
L
J
All Dimensions in mm  
Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
PIN 1 +  
PIN 3 -  
K
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
SB10150F  
SB10200F  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
150  
105  
200  
140  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
V
A
Average Rectified Output Current  
@TL = 95°C  
10  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed  
on rated load (JEDEC Method)  
IFSM  
150  
0.92  
A
Forward Voltage  
@IF = 10A  
VFM  
IRM  
V
Peak Reverse Current  
@TA = 25°C  
0.5  
50  
mA  
At Rated DC Blocking Voltage  
@TA = 100°C  
Typical Junction Capacitance (Note 1)  
Typical Thermal Resistance (Note 2)  
Cj  
700  
4.0  
pF  
°C/W  
°C  
RθJC  
Operating and Storage Temperature Range  
Tj, TSTG  
-65 to +150  
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
2. Thermal resistance junction to case mounted on heatsink.  
SB10150F – SB10200F  
1 of 4  
© 2008 Won-Top Electronics  

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