Zibo Seno Electronic Engineering Co., Ltd.
SB1045L-SB10200L
10.0A SUPER BARRIER RECTIFIER
Features
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Schottky Barrier Chip
Bypass Diodes for Solar Panels
High Junction Temperture
High Thermal Reliability
Patented Super Barrier Rectifier Technology
High Foward Surge Capability
Ultra Low Power Loss, High Efficiency
Excellent High Temperature Stability
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Top View
Bottom View
LEFT PIN
BOTTOMSIDE
HEAT SINK
RIGHT PIN
Mechanical Data
Note: Pins Left & Right must
be electrically connected
at the printed circuit board.
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Case:TO-277B Molded Plastic "Green" Molding Compound
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
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Polarity: Cathode Band
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Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS/Lead Free Version
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Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SB
SB
SB
SB
SB
SB
SB
Parameter
Peak Repetitive Reverse Voltage
Symbol
Unit
V
10100L
1060L
1080L
10150L
10200L
1045L
1050L
VRRM
VRWM
VDC
Working Peak Reverse Voltage
DC blocking voltage
45
32
50
35
60
42
80
56
100
70
150
105
200
140
VR(RMS)
RMS Rectified Voltage
V
A
Average Rectified Output Current
(Note1)
10
IO
Non-Repetitive Peak Forward Surge8.3ms
IFSM
150
Single Half Sine-Wave Superimposed on rated
load(JEDEC Method)
(Note2)
A
I2 t Rating for Fusing (t < 8.3ms)
I
2 t
VFM
2s
A
93.4
℃
Forward Voltage Drop TA =25
0.50
0.55
0.90
V
0.75
@IF=10A
Peak Reverse Curent
TA=25 ℃
0.3
15
IR
mA
At Rated DC Blocking Voltage
Typical Thermal Resistance
Junctionto Ambient
TA =100 ℃
RθJA
RθJL
80
10
℃ /W
TJ
Operating junction temperature range
storage temperature range
-55 to +150
-55 to +150
℃
℃
TSTG
Note:1.Valid Provided that are kept at ambient temperature at a distance of 9.5mm from the case.
2.Fr-4pcb.2oz.Copper,minimum recommend pad layout .18.8mm×14.4.Anode pad dimensions 5.6mm×14.4m
m.
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SB1045L-SB10200L
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