5秒后页面跳转
SB10150L PDF预览

SB10150L

更新时间: 2024-02-13 20:21:47
品牌 Logo 应用领域
圣诺 - SENO /
页数 文件大小 规格书
3页 277K
描述
10.0A SUPER BARRIER RECTIFIER

SB10150L 数据手册

 浏览型号SB10150L的Datasheet PDF文件第2页浏览型号SB10150L的Datasheet PDF文件第3页 
Zibo Seno Electronic Engineering Co., Ltd.  
SB1045L-SB10200L  
10.0A SUPER BARRIER RECTIFIER  
Features  
!
!
!
Schottky Barrier Chip  
Bypass Diodes for Solar Panels  
High Junction Temperture  
High Thermal Reliability  
Patented Super Barrier Rectifier Technology  
High Foward Surge Capability  
Ultra Low Power Loss, High Efficiency  
Excellent High Temperature Stability  
!
!
!
!
!
Top View  
Bottom View  
LEFT PIN  
BOTTOMSIDE  
HEAT SINK  
RIGHT PIN  
Mechanical Data  
Note: Pins Left & Right must  
be electrically connected  
at the printed circuit board.  
!
!
Case:TO-277B Molded Plastic "Green" Molding Compound  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
!
Polarity: Cathode Band  
!
!
Mounting Position: Any  
Marking: Type Number  
Lead Free: For RoHS/Lead Free Version  
!
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
SB  
SB  
SB  
SB  
SB  
SB  
SB  
Parameter  
Peak Repetitive Reverse Voltage  
Symbol  
Unit  
V
10100L  
1060L  
1080L  
10150L  
10200L  
1045L  
1050L  
VRRM  
VRWM  
VDC  
Working Peak Reverse Voltage  
DC blocking voltage  
45  
32  
50  
35  
60  
42  
80  
56  
100  
70  
150  
105  
200  
140  
VR(RMS)  
RMS Rectified Voltage  
V
A
Average Rectified Output Current  
(Note1)  
10  
IO  
Non-Repetitive Peak Forward Surge8.3ms  
IFSM  
150  
Single Half Sine-Wave Superimposed on rated  
load(JEDEC Method)  
(Note2)  
A
I2 t Rating for Fusing (t < 8.3ms)  
I
2 t  
VFM  
2s  
A
93.4  
Forward Voltage Drop TA =25  
0.50  
0.55  
0.90  
V
0.75  
@IF=10A  
Peak Reverse Curent  
TA=25  
0.3  
15  
IR  
mA  
At Rated DC Blocking Voltage  
Typical Thermal Resistance  
Junctionto Ambient  
TA =100 ℃  
RθJA  
RθJL  
80  
10  
/W  
TJ  
Operating junction temperature range  
storage temperature range  
-55 to +150  
-55 to +150  
TSTG  
Note:1.Valid Provided that are kept at ambient temperature at a distance of 9.5mm from the case.  
2.Fr-4pcb.2oz.Copper,minimum recommend pad layout .18.8mm×14.4.Anode pad dimensions 5.6mm×14.4m  
m.  
www.senocn.com  
1 of 3  
SB1045L-SB10200L  
Alldatasheet  

与SB10150L相关器件

型号 品牌 获取价格 描述 数据表
SB10150LCT ASEMI

获取价格

DUAL LOW VF SCHOTTKY RECTIFIER
SB10150-LF WTE

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 150V V(RRM), Silicon, TO-220, ROHS COM
SB10150LFCT ASEMI

获取价格

DUAL LOW VF SCHOTTKY RECTIFIER
SB10-150SMD05 SEME-LAB

获取价格

SHOTTKY BARRIER RECTIFIER DIODE
SB10-18 SANYO

获取价格

80V, 1A Rectifier
SB10-18K SANYO

获取价格

180V, 1A Rectifier
SB101A NEC

获取价格

Dual Color LED Display Cluster, Red/green, 87mm
SB101FW-30 SWST

获取价格

肖特基整流管
SB101G TSC

获取价格

Single Phase 10.0 AMPS. Glass Passivated Bridge Rectifiers
SB102 TSC

获取价格

Single Phase 10 AMPS. Silicon Bridge Rectifiers