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SB10150-LF PDF预览

SB10150-LF

更新时间: 2024-02-09 11:22:29
品牌 Logo 应用领域
WTE 局域网高压二极管
页数 文件大小 规格书
4页 70K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 150V V(RRM), Silicon, TO-220, ROHS COMPLIANT, PLASTIC, TO-220A, 2 PIN

SB10150-LF 技术参数

生命周期:Active零件包装代码:SFM
包装说明:R-PSFM-T2针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.37
其他特性:LOW LEAKAGE CURRENT应用:HIGH VOLTAGE
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-220JESD-30 代码:R-PSFM-T2
最大非重复峰值正向电流:150 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
最大重复峰值反向电压:150 V表面贴装:NO
技术:SCHOTTKY端子形式:THROUGH-HOLE
端子位置:SINGLEBase Number Matches:1

SB10150-LF 数据手册

 浏览型号SB10150-LF的Datasheet PDF文件第2页浏览型号SB10150-LF的Datasheet PDF文件第3页浏览型号SB10150-LF的Datasheet PDF文件第4页 
WTE  
POWER SEMICONDUCTORS  
SB10150 – SB10200  
10A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER  
Features  
Schottky Barrier Chip  
B
Guard Ring for Transient Protection  
Low Forward Voltage Drop  
Low Reverse Leakage Current  
High Surge Current Capability  
Plastic Material has UL Flammability  
Classification 94V-O  
TO-220A  
C
Dim  
A
B
C
D
E
Min  
13.90  
9.80  
2.54  
3.56  
12.70  
0.51  
3.55 Ø  
5.75  
4.16  
2.03  
0.30  
1.14  
4.83  
Max  
15.90  
10.70  
3.43  
G
A
E
PIN1  
3
4.56  
D
14.73  
0.96  
F
G
H
I
4.09 Ø  
6.85  
Mechanical Data  
F
Case: TO-220A, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: See Diagram  
Weight: 2.24 grams (approx.)  
5.00  
P
J
2.92  
K
L
0.65  
I
1.40  
P
5.33  
Mounting Position: Any  
H
L
J
All Dimensions in mm  
Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
PIN 1 +  
PIN 3 -  
+
Case  
K
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
SB10150  
SB10200  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
150  
105  
200  
140  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
V
A
Average Rectified Output Current  
@TL = 95°C  
10  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed  
on rated load (JEDEC Method)  
IFSM  
150  
0.92  
A
Forward Voltage  
@IF = 10A  
VFM  
IRM  
V
Peak Reverse Current  
@TA = 25°C  
0.5  
50  
mA  
At Rated DC Blocking Voltage  
@TA = 100°C  
Typical Junction Capacitance (Note 1)  
Typical Thermal Resistance (Note 2)  
Cj  
700  
2.0  
pF  
°C/W  
°C  
RθJC  
Operating and Storage Temperature Range  
Tj, TSTG  
-65 to +150  
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
2. Thermal resistance junction to case mounted on heatsink.  
SB10150 – SB10200  
1 of 4  
© 2008 Won-Top Electronics  

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