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SA2B

更新时间: 2024-09-15 08:55:07
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 87K
描述
Surface Mount Glass Passivated Rectifier

SA2B 数据手册

 浏览型号SA2B的Datasheet PDF文件第2页浏览型号SA2B的Datasheet PDF文件第3页浏览型号SA2B的Datasheet PDF文件第4页 
New Product  
SA2B thru SA2M  
Vishay General Semiconductor  
Surface Mount Glass Passivated Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Low forward voltage drop  
• Low leakage current  
• High forward surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
DO-214AC (SMA)  
• Compliant to RoHS directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in general purpose rectification of power supplies,  
inverters, converters and freewheeling diodes for consumer  
and telecommunication.  
PRIMARY CHARACTERISTICS  
IF(AV)  
2.0 A  
VRRM  
IFSM  
100 V to 1000 V  
55 A  
MECHANICAL DATA  
Case: DO-214AC (SMA)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS compliant, commercial grade  
IR  
3.0 μA  
VF at IF = 2.0 A  
TJ max.  
0.854 V  
150 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
SA2B  
SA2D  
2D  
SA2G  
2G  
SA2J  
2J  
SA2K  
2K  
SA2M  
2M  
UNIT  
Device marking code  
2B  
Maximum repetitive peak reverse voltage  
Average forward current  
VRRM  
IF(AV)  
100  
200  
400  
600  
800  
1000  
V
A
2.0  
55  
Peak forward surge current 10 ms single half  
sine-wave superimposed on rated load  
IFSM  
A
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
°C  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
TYP.  
0.911  
0.954  
0.805  
0.854  
0.19  
MAX.  
UNIT  
IF = 1.0 A  
-
1.1  
-
TJ = 25 °C  
IF = 2.0 A  
IF = 1.0 A  
IF = 2.0 A  
(1)  
Instantaneous forward voltage  
VF  
V
TJ = 125 °C  
0.95  
3
TJ = 25 °C  
(2)  
Reverse current  
Rated VR  
IR  
μA  
TJ = 125 °C  
28  
90  
IF = 0.5 A, IR = 1.0 A,  
Irr = 0.25 A  
Typical reverse recovery time  
Typical junction capacitance  
trr  
1.5  
11  
-
-
μs  
4.0 V, 1 MHz  
CJ  
pF  
Notes  
(1)  
(2)  
Pulse test: 300 μs pulse width, 1 % duty cycle  
Pulse test: Pulse width 40 ms  
Document Number: 88969  
Revision: 13-Oct-09  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1

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