Datasheet > SA2B

SA2B

更新时间： 2024-11-09 08:55:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	87K
描述
Surface Mount Glass Passivated Rectifier

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SA2B 数据手册

New Product

SA2B thru SA2M

Vishay General Semiconductor

Surface Mount Glass Passivated Rectifier

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Low forward voltage drop

• Low leakage current

• High forward surge capability

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

DO-214AC (SMA)

• Compliant to RoHS directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in general purpose rectification of power supplies,

inverters, converters and freewheeling diodes for consumer

and telecommunication.

PRIMARY CHARACTERISTICS

I_F(AV)

2.0 A

V_RRM

I_FSM

100 V to 1000 V

55 A

MECHANICAL DATA

Case: DO-214AC (SMA)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

I_R

3.0 μA

V_Fat I_F= 2.0 A

T_Jmax.

0.854 V

150 °C

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

Polarity: Color band denotes the cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

SA2B

SA2D

SA2G

SA2J

SA2K

SA2M

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Average forward current

V_RRM

I_F(AV)

100

200

400

600

800

1000

2.0

Peak forward surge current 10 ms single half

sine-wave superimposed on rated load

I_FSM

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 150

°C

ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

0.911

0.954

0.805

0.854

0.19

MAX.

UNIT

I_F= 1.0 A

1.1

T_J= 25 °C

I_F= 2.0 A

I_F= 1.0 A

I_F= 2.0 A

(1)

Instantaneous forward voltage

V_F

T_J= 125 °C

0.95

T_J= 25 °C

(2)

Reverse current

Rated V_R

I_R

μA

T_J= 125 °C

I_F= 0.5 A, I_R= 1.0 A,

I_rr= 0.25 A

Typical reverse recovery time

Typical junction capacitance

t_rr

1.5

μs

4.0 V, 1 MHz

C_J

Notes

(1)

(2)

Pulse test: 300 μs pulse width, 1 % duty cycle

Pulse test: Pulse width ≤ 40 ms

Document Number: 88969

Revision: 13-Oct-09

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

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