Datasheet > S8450MG

S8450MG

更新时间： 2024-09-18 12:04:43

品牌	Logo	应用领域
ROITHNER		二极管激光二极管
页数	文件大小	规格书
5页	322K
描述
Infrared Laser Diode

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S8450MG 数据手册

S8450MG

TECHNICAL DATA

Infrared Laser Diode

Features

•

Lasing Mode Structure: multi mode

Peak Wavelength : typ. 840 nm

Optical Ouput Power: 50 mW

Package: 5.6 mm

Electrical Connection

Pin Configuration

Bottom View

Function

LD Cathode

LD Anode

n.c.

Absolute Maximum Ratings (T_C=20°C)

Item

Symbol

Value

Unit

CW Output Power

P_O

V_r

LD Reverse Voltage

Operating Case Temperature

Storage Temperature

T_C

T_stg

-10 … +40

-15 … +85

°C

Specifications (T_C=20°C)

Item

Optical Specifications

CW Output Power

Symbol

Min.

Typ.

Max.

Unit

P_O

λ_C

θ_║

θ_┴

840

deg

Center Wavelength

830

850

FWHM Beam Divergence

Electrical Specifications

Threshold Current

Operating Current

Slope Efficiency

I_th

I_op

0.9

1.8

110

mW/mA

0.7

1.5

Operating Voltage

U_op

2.1

The above specifications are for reference purpose only and subjected to change without prior notice.

04.10.2011

S8450MG

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