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S80KS2562GABHA023 PDF预览

S80KS2562GABHA023

更新时间: 2024-11-19 14:51:31
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
54页 1099K
描述
256MBit 1.8 V Automotive (85°C) HyperBus HYPERRAM Gen 2.0 in 24 FBGA

S80KS2562GABHA023 数据手册

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S80KS2562  
256 Mb: HYPERRAM™ self-refresh dynamic  
RAM (DRAM) with HYPERBUS™ interface  
1.8 V  
Features  
• Interface  
- HYPERBUS™ Interface  
- 1.8 V Interface support  
• Single-ended clock (CK) - 11 bus signals  
• Optional differential clock (CK, CK#) - 12 bus signals  
- Chip select (CS#)  
- 8-bit data bus (DQ[7:0])  
- Hardware reset (RESET#)  
- Bidirectional read-write data strobe (RWDS)  
• Output at the start of all transactions to indicate refresh latency  
• Output during read transactions as read data strobe  
• Input during write transactions as write data mask  
• Performance, power, and packages  
- 200-MHz maximum clock rate  
- DDR - transfers data on both edges of the clock  
- Data throughput up to 400 MBps (3,200 Mbps)  
- Configurable burst characteristics  
• Linear burst  
• Wrapped burst lengths:  
16 bytes (8 clocks)  
32 bytes (16 clocks)  
64 bytes (32 clocks)  
128 bytes (64 clocks)  
• Hybrid option - one wrapped burst followed by linear burst  
- Configurable output drive strength  
- Power modes  
• Hybrid sleep mode  
• Deep power down  
- Array refresh  
• Partial memory array(1/8, 1/4, 1/2, and so on)  
• Full  
- Package  
• 24-ball FBGA  
- Operating temperature range  
• Industrial (I): 40 °C to +85 °C  
• Industrial Plus (V): 40 °C to +105 °C  
• Automotive, AEC-Q100 Grade 3: 40 °C to +85 °C  
• Automotive, AEC-Q100 Grade 2: 40 °C to +105 °C  
• Automotive, AEC-Q100 Grade 1: 40 °C to +125 °C  
• Technology  
- 25-nm DRAM  
Datasheet  
www.infineon.com  
Please read the Important Notice and Warnings at the end of this document  
page 1 of 54  
002-31337 Rev. *C  
2021-09-27  

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