Datasheet > S80KS2564GACHI043

S80KS2564GACHI043

更新时间： 2024-11-19 11:13:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
48页	1051K
描述
256MBit 1.8 V Industrial (85°C) HyperBus x16 HYPERRAM Gen 3.0 in 49 FBGA

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S80KS2564GACHI043 数据手册

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S80KS2564

256 Mb HYPERRAM™ self-refresh DRAM

(PSRAM)

HYPERBUS™ Extended-IO (x16) interface, 1.8 V

Features

• Interface

- HYPERBUS™ extended-IO

- 1.7 to 2.0 V (1.8 typ.) interface support

• Single-ended clock (CK) - 20 bus signals

• Optional differential clock (CK, CK#) - 21 bus signals

- Chip Select (CS#)

- 16-bit data bus (DQ[15:0])

- Hardware reset (RESET#)

- Bidirectional read-write data strobe (RWDS [1:0])

• Output at the start of all transactions to indicate refresh latency

• Output during read transactions as read data strobe

• Input during write transactions as write data mask

• Performance, power, and packages

- 200 MHz maximum clock rate

- DDR - transfers data on both edges of the clock

- Data throughput up to 800 MBps (6,400 Mbps)

- Configurable burst characteristics

• Linear burst

• Wrapped burst lengths:

16 words (8 clocks)

32 words (16 clocks)

64 words (32 clocks)

128 words (64 clocks)

• Hybrid option - one wrapped burst followed by linear burst

- Configurable output drive strength

- Power modes

• Hybrid Sleep mode

• Deep Power Down

- Memory array refresh

• Partial array (1/8, 1/4, 1/2, and so on)

• Full array

- Package

• 49-ball FBGA

- Operating temperature range

• Industrial (I): –40°C to +85°C

• Industrial Plus (V): –40°C to +105°C

• Technology

- 25 nm DRAM

Datasheet

www.infineon.com

Please read the Important Notice and Warnings at the end of this document

page 1 of 48

002-31341 Rev. *C

2022-04-18

12 3 4 5 6 7...48

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