Datasheet > S80KS2562GABHB023

S80KS2562GABHB023

更新时间： 2024-11-22 14:51:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
54页	1099K
描述
256MBit 1.8 V Automotive (105°C) HyperBus HYPERRAM Gen 2.0 in 24 FBGA

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S80KS2562GABHB023 数据手册

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S80KS2562

256 Mb: HYPERRAM™ self-refresh dynamic

RAM (DRAM) with HYPERBUS™ interface

1.8 V

Features

• Interface

- HYPERBUS™ Interface

- 1.8 V Interface support

• Single-ended clock (CK) - 11 bus signals

• Optional differential clock (CK, CK#) - 12 bus signals

- Chip select (CS#)

- 8-bit data bus (DQ[7:0])

- Hardware reset (RESET#)

- Bidirectional read-write data strobe (RWDS)

• Output at the start of all transactions to indicate refresh latency

• Output during read transactions as read data strobe

• Input during write transactions as write data mask

• Performance, power, and packages

- 200-MHz maximum clock rate

- DDR - transfers data on both edges of the clock

- Data throughput up to 400 MBps (3,200 Mbps)

- Configurable burst characteristics

• Linear burst

• Wrapped burst lengths:

16 bytes (8 clocks)

32 bytes (16 clocks)

64 bytes (32 clocks)

128 bytes (64 clocks)

• Hybrid option - one wrapped burst followed by linear burst

- Configurable output drive strength

- Power modes

• Hybrid sleep mode

• Deep power down

- Array refresh

• Partial memory array(1/8, 1/4, 1/2, and so on)

• Full

- Package

• 24-ball FBGA

- Operating temperature range

• Industrial (I): ^–40 °C to +85 °C

• Industrial Plus (V): ^–40 °C to +105 °C

• Automotive, AEC-Q100 Grade 3: ^–40 °C to +85 °C

• Automotive, AEC-Q100 Grade 2: ^–40 °C to +105 °C

• Automotive, AEC-Q100 Grade 1: ^–40 °C to +125 °C

• Technology

- 25-nm DRAM

Datasheet

www.infineon.com

Please read the Important Notice and Warnings at the end of this document

page 1 of 54

002-31337 Rev. *C

2021-09-27

12 3 4 5 6 7...54

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