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S80KS2564GACHA040 PDF预览

S80KS2564GACHA040

更新时间: 2024-11-19 15:17:43
品牌 Logo 应用领域
英飞凌 - INFINEON 静态存储器
页数 文件大小 规格书
48页 1032K
描述
伪静态随机存储器(PSRAM)

S80KS2564GACHA040 数据手册

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S80KS2564  
256 Mb HYPERRAM™ self-refresh DRAM  
(PSRAM)  
HYPERBUS™ Extended-IO (x16) interface, 1.8 V, automotive  
Features  
• Interface  
- HYPERBUS™ extended-IO  
- 1.7 to 2.0 V (1.8 typ.) interface support  
• Single-ended clock (CK) - 20 bus signals  
• Optional differential clock (CK, CK#) - 21 bus signals  
- Chip Select (CS#)  
- 16-bit data bus (DQ[15:0])  
- Hardware reset (RESET#)  
- Bidirectional read-write data strobe (RWDS [1:0])  
• Output at the start of all transactions to indicate refresh latency  
• Output during read transactions as read data strobe  
• Input during write transactions as write data mask  
• Performance, power, and packages  
- 200 MHz maximum clock rate  
- DDR - transfers data on both edges of the clock  
- Data throughput up to 800 MBps (6,400 Mbps)  
- Configurable burst characteristics  
• Linear burst  
• Wrapped burst lengths:  
16 words (8 clocks)  
32 words (16 clocks)  
64 words (32 clocks)  
128 words (64 clocks)  
• Hybrid option - one wrapped burst followed by linear burst  
- Configurable output drive strength  
- Power modes  
• Hybrid Sleep mode  
• Deep Power Down  
- Memory array refresh  
• Partial array (1/8, 1/4, 1/2, and so on)  
• Full array  
- Package  
• 49-ball FBGA  
- Operating temperature range  
• Automotive, AEC-Q100 Grade 3: –40°C to +85°C  
• Automotive, AEC-Q100 Grade 2: –40°C to +105°C  
• Technology  
- 25 nm DRAM  
Datasheet  
www.infineon.com  
Please read the Important Notice and Warnings at the end of this document  
page 1  
002-36092 Rev. *A  
2023-03-28  

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