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S8055M56TP PDF预览

S8055M56TP

更新时间: 2024-11-05 15:50:27
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网栅极
页数 文件大小 规格书
9页 826K
描述
Silicon Controlled Rectifier, 55A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-218AC, ROHS COMPLIANT, PLASTIC PACKAGE-3

S8055M56TP 技术参数

生命周期:Active零件包装代码:TO-218AC
包装说明:FLANGE MOUNT, R-PSFM-D3针数:3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.61Is Samacsys:N
外壳连接:ANODE配置:SINGLE
最大直流栅极触发电流:40 mAJEDEC-95代码:TO-218AC
JESD-30 代码:R-PSFM-D3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大均方根通态电流:55 A断态重复峰值电压:800 V
重复峰值反向电压:800 V表面贴装:NO
端子面层:MATTE TIN端子形式:SOLDER LUG
端子位置:SINGLE触发设备类型:SCR
Base Number Matches:1

S8055M56TP 数据手册

 浏览型号S8055M56TP的Datasheet PDF文件第2页浏览型号S8055M56TP的Datasheet PDF文件第3页浏览型号S8055M56TP的Datasheet PDF文件第4页浏览型号S8055M56TP的Datasheet PDF文件第5页浏览型号S8055M56TP的Datasheet PDF文件第6页浏览型号S8055M56TP的Datasheet PDF文件第7页 
Teccor® brandThyristors  
55 Amp Standard SCRs  
Sxx55x Series  
Description  
Excellent unidirectional switches for phase control  
applications such as heating and motor speed controls.  
Standard phase control SCRs are triggered with few  
milliamperes of current at less than 1.5V potential.  
Features & Benefits  
• RoHS compliant  
• Voltage capability up  
to 1000 V  
• Glass – passivated  
junctions  
• Surge capability up to  
650 A  
Applications  
Main Features  
Typical applications are AC solid-state switches, industrial  
power tools, exercise equipment, white goods and  
commercial appliances.  
Symbol  
Value  
55  
Unit  
A
IT(RMS)  
VDRM/VRRM  
IGT  
400 to 1000  
40  
V
Schematic Symbol  
mA  
A
K
G
Absolute Maximum Ratings  
Symbol  
Parameter  
Test Conditions  
Value  
Unit  
IT(RMS)  
IT(AV)  
RMS on-state current  
TC = 90°C  
55  
A
Average on-state current  
TC = 90°C  
35.0  
A
A
single half cycle; f = 50Hz;  
TJ (initial) = 25°C  
550  
650  
ITSM  
Peak non-repetitive surge current  
single half cycle; f = 60Hz;  
TJ (initial) = 25°C  
I2t  
I2t Value for fusing  
tp = 8.3 ms  
1750  
175  
A2s  
di/dt  
Critical rate of rise of on-state current  
A/μs  
f = 60Hz ;TJ = 125°C  
TJ = 125°C  
PW = 10µS  
IGM  
Peak gate current  
4.0  
A
PG(AV)  
Tstg  
TJ  
Average gate power dissipation  
Storage temperature range  
0.8  
W
°C  
°C  
TJ = 125°C  
-40 to 150  
-40 to 125  
Operating junction temperature range  
Sxx55x Series  
©2011 Littelfuse, Inc  
295  
Revised: June 24, 2011 04:57 PM  
Specifications are subject to change without notice.  
Please refer to http://www.littelfuse.com for current information.  

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