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S8055R67 PDF预览

S8055R67

更新时间: 2024-11-05 15:50:27
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网栅极
页数 文件大小 规格书
9页 226K
描述
Silicon Controlled Rectifier, 55A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-220, 2 PIN

S8055R67 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SFM包装说明:FLANGE MOUNT, R-PSFM-G2
针数:3Reach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:5.13
外壳连接:ANODE配置:SINGLE
最大直流栅极触发电流:40 mAJESD-30 代码:R-PSFM-G2
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:55 A
断态重复峰值电压:800 V重复峰值反向电压:800 V
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SCRBase Number Matches:1

S8055R67 数据手册

 浏览型号S8055R67的Datasheet PDF文件第2页浏览型号S8055R67的Datasheet PDF文件第3页浏览型号S8055R67的Datasheet PDF文件第4页浏览型号S8055R67的Datasheet PDF文件第5页浏览型号S8055R67的Datasheet PDF文件第6页浏览型号S8055R67的Datasheet PDF文件第7页 
                                                                
                                                                                       
Teccor® brandThyristors  
55 Amp Standard SCRs  
Sxx55x Series  
Description  
Excellent unidirectional switches for phase control  
applications such as heating and motor speed controls.  
Standard phase control SCRs are triggered with few  
milliamperes of current at less than 1.5V potential.  
Features & Benefits  
tꢀ  
tꢀ  
3P)4ꢀDPNQMJBOU  
tꢀ  
7PMUBHFꢀDBQBCJMJUZꢀVQꢀ  
to 1000 V  
(MBTTꢀoꢀQBTTJWBUFEꢀ  
junctions  
tꢀ  
650 A  
4VSHFꢀDBQBCJMJUZꢀVQꢀUPꢀ  
Applications  
Main Features  
Typical applications are AC solid-state switches, industrial  
power tools, exercise equipment, white goods and  
commercial appliances.  
Symbol  
Value  
55  
Unit  
A
IT(RMS)  
VDRM/VRRM  
IGT  
400 to 1000  
40  
V
Schematic Symbol  
mA  
A
K
G
Absolute Maximum Ratings  
Symbol  
Parameter  
Test Conditions  
Value  
Unit  
IT(RMS)  
IT(AV)  
RMS on-state current  
TC = 90°C  
55  
A
Average on-state current  
TC = 90°C  
35.0  
A
A
single half cycle; f = 50Hz;  
550  
650  
T (initial) = 25°C  
J
ITSM  
Peak non-repetitive surge current  
single half cycle; f = 60Hz;  
T (initial) = 25°C  
J
I2t  
I2t Value for fusing  
tp = 8.3 ms  
1750  
175  
A2s  
di/dt  
Critical rate of rise of on-state current  
A/μs  
f = 60Hz ;T = 125°C  
J
T = 125°C  
PW = 10ꢀS  
J
IGM  
Peak gate current  
4.0  
A
PG(AV)  
Tstg  
Average gate power dissipation  
Storage temperature range  
0.8  
W
°C  
°C  
T = 125°C  
J
-40 to 150  
-40 to 125  
T
Operating junction temperature range  
J
Sxx55x Series  
©2010 Littelfuse, Inc  
Specifications are subject to change without notice.  
Please refer to http://www.littelfuse.com for current information.  
295  
Revised: May 10, 2010 09:33 PM  

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