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S7960-1008S

更新时间： 2024-11-10 15:50:27
品牌 Logo 应用领域
HAMAMATSU 传感器换能器
页数 文件大小 规格书
8页 219K
描述
CCD Sensor, 7-13V, Rectangular, Through Hole Mount, CERAMIC, DIP-24

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中文翻译

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S7960-1008S 技术参数

生命周期：ObsoleteReach Compliance Code：unknown
风险等级：5.74其他特性：SENSITIVITY IS 2.20 MICRO V/ELECTRON
阵列类型：FULL FRAME TRANSFER主体宽度：22.4 mm
主体高度：4.8 mm主体长度或直径：44 mm
动态范围：74 dB外壳：CERAMIC, METAL-SEALED COFIRED
安装特点：THROUGH HOLE MOUNT最高工作温度：30 °C
最低工作温度：-50 °C输出范围：7-13V
输出类型：ANALOG VOLTAGE封装形状/形式：RECTANGULAR
像素大小：24X24 µm传感器/换能器类型：IMAGE SENSOR,CCD
光谱响应 (nm)：200-1100表面贴装：NO
端接类型：SOLDERBase Number Matches：1

S7960-1008S 数据手册

 浏览型号S7960-1008S的Datasheet PDF文件第2页浏览型号S7960-1008S的Datasheet PDF文件第3页浏览型号S7960-1008S的Datasheet PDF文件第4页浏览型号S7960-1008S的Datasheet PDF文件第5页浏览型号S7960-1008S的Datasheet PDF文件第6页浏览型号S7960-1008S的Datasheet PDF文件第7页 
I M A G E S E N S O R  
CCD area image sensor  
S7960/S7961-1008  
Back-thinned FFT-CCD for high-speed application  
S7960/S7961-1008 are FFT-CCD area image sensors specifically designed for high speed operation. A high frame rate is attained by employing  
a wide band width on-chip amplifier. In binning operation, S7960/S7961-1008 can be used as a linear image sensor having a long aperture in the  
direction of the device length. The binning operation offers significant improvement in signal-to-noise ratio and signal processing speed compared  
to conventional methods by which signals are digitally added by an external circuit. In area scan operation, S7960/S7961-1008 can be used as a  
high frame rate camera. S7960/S7961-1008 also feature low dark signal (MPP mode operation). S7960/S7961-1008 have an effective pixel size  
of 24 × 24 µm and is available in image areas of 24.576 (H) × 6.000 (V) mm.  
One-stage peltier cooler is built into the package for thermoelectric cooling (S7961-1008). At room temperature operation, the device can be  
cooled down to -10 ˚C (Typ.) without using any other cooling technique. In addition, since both the CCD chip and the peltier cooler are  
hermetically sealed, no dry air is required, thus allowing easy handling.  
Features  
Applications  
ꢁ High-speed on-chip amplifier  
ꢁ Greater than 90 % quantum efficiency  
ꢁ Wide spectral response range  
ꢁ Built-in TE-cooler  
ꢁ High-speed spectrometer  
ꢁ High-speed UV imaging  
ꢁ Optical and spectrophotometric analyzer  
ꢁ MPP operation  
ꢁ Non-cooled type: S7960-1008  
One-stage TE-cooled type: S7961-1008  
(Two-stage TE-cooled type is optional)  
Selection and order guide  
ꢀ
Number of  
total pixels  
Number of  
active pixels  
Active area  
[mm (H) × mm (V)]  
Type No.  
S7960-1008  
S7961-1008  
Cooling  
Non-cooled  
1044 × 256  
1024 × 250  
24.576 × 6.000  
One-stage TE-cooled  
A window material can be selected upon need, and the following is available.  
AR-coated sapphire (standard): expressed by “S” #  
Quart: expressed by “Q” #  
Temporary window: expressed by “N” #  
# This should be added at the end of a type No. when ordered.  
ex. S7960-1008S: AR-coated sapphire  
General ratings  
ꢀ
Parameter  
Specification  
CCD structure  
Fill factor  
Full frame transfer  
100 %  
Number of active pixels  
Pixel size  
1024 (H) × 250 (V)  
24 (H) × 24 (V) µm  
24.576 (H) × 6.000 (V) mm  
2 phase  
Active area  
Vertical clock phase  
Horizontal clock phase  
Output circuit  
2 phase  
Two-stage MOSFET source follower  
24 pin ceramic package  
AR coated sapphire  
Package  
Window  
Quartz, temporary window are available upon request  
1
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