S602TSAP

更新时间： 2024-09-15 12:46:55

品牌	Logo	应用领域
力特 - LITTELFUSE		可控硅
页数	文件大小	规格书
9页	1658K
描述
Teccor brand Thyristors EV Series 1.5 Amp Sensitive SCRs

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S602TSAP 数据手册

Teccor^®brandThyristors

EV Series 1.5 Amp Sensitive SCRs

Sx02xS Series

Description

New 1.5 Amp sensitive gate SCR series offers high static

dv/dt with low turn off time (tq) through small die planar

construction design. All SCR’s junctions are glass-

passivated to ensure long term reliability and parametric

stability.

Features

• RoHS compliant and

• High dv/dt noise immunity

Halogen-Free

• Improved turn-off

•Thru hole and surface

time (tq) < 35 μsec.

mount packages

• Sensitive gate for direct

• Surge

capability > 15Amps

microprocessor interface

Main Features

• Blocking voltage

Symbol

Value

1.5

Unit

(V_DRM/ V_RRM

)

I_T(RMS)

V_DRM/ V_RRM

I_GT

capability — up to 600V

400 to 600

200

µA

Schematic Symbol

Applications

The Sx02xS EV series is speciﬁcally designed for Gas

Ignition applications that require high pulse surge current

capability.

Absolute Maximum Ratings

Symbol

I_T(RMS)

Parameter

Value

Unit

TO-92

SOT-223

TO-92

T_C= 65°C

T_L= 95°C

T_C= 65°C

T_C= 95°C

RMS on-state current

(full sine wave)

1.5

I_T(AV)

Average on-state current

0.95

SOT-223

F = 50 Hz

F = 60 Hz

F = 50 Hz

F = 60 Hz

12.5

15.0

0.78

0.93

Non repetitive surge peak on-state current

(Single cycle, T_Jinitial = 25°C)

TO-92

SOT-223

I_TSM

t_p= 10 ms

t_p= 8.3 ms

I²t

I²t Value for fusing

A²s

TO-92

SOT-223

di/dt

Critical rate of rise of on-state current IG = 10mA

A/μs

T_J= 125°C

I_GM

Peak gate current

t_p= 10 μs

1.0

T_J= 125°C

P_G(AV)

T_stg

T_J

Average gate power dissipation

Storage junction temperature range

Operating junction temperature range

0.1

°C

-40 to 150

-40 to 125

Sx02xS Series

Speciﬁcations are subject to change without notice.

201

Revised: June 21, 2011 04:14 PM

Please refer to http://www.littelfuse.com for current information.

12 3 4 5 6 7...9

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