是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | POST/STUD MOUNT, O-MUPM-H3 | Reach Compliance Code: | unknown |
HTS代码: | 8541.30.00.80 | 风险等级: | 5.92 |
标称电路换相断开时间: | 8 µs | 配置: | SINGLE |
关态电压最小值的临界上升速率: | 500 V/us | 最大直流栅极触发电流: | 150 mA |
最大直流栅极触发电压: | 2.5 V | 最大维持电流: | 500 mA |
JEDEC-95代码: | TO-209AE | JESD-30 代码: | O-MUPM-H3 |
最大漏电流: | 40 mA | 湿度敏感等级: | 1 |
通态非重复峰值电流: | 12000 A | 元件数量: | 1 |
端子数量: | 3 | 最大通态电流: | 225000 A |
最高工作温度: | 125 °C | 最低工作温度: | -40 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | POST/STUD MOUNT | 峰值回流温度(摄氏度): | 225 |
认证状态: | Not Qualified | 最大均方根通态电流: | 550 A |
断态重复峰值电压: | 400 V | 重复峰值反向电压: | 400 V |
子类别: | Silicon Controlled Rectifiers | 表面贴装: | NO |
端子形式: | HIGH CURRENT CABLE | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 触发设备类型: | SCR |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
S30DGF4A0F | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 550A I(T)RMS, 225000mA I(T), 400V V(DRM), 400V V(RRM), 1 Ele | |
S30DGF4B0 | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 550A I(T)RMS, 225000mA I(T), 400V V(DRM), 400V V(RRM), 1 Ele | |
S30DGF4B0F | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 550A I(T)RMS, 225000mA I(T), 400V V(DRM), 400V V(RRM), 1 Ele | |
S30DGF6A0 | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 550A I(T)RMS, 205000mA I(T), 600V V(DRM), 600V V(RRM), 1 Ele | |
S30DGF6A0F | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 550A I(T)RMS, 205000mA I(T), 600V V(DRM), 600V V(RRM), 1 Ele | |
S30DGF6B0 | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 550A I(T)RMS, 205000mA I(T), 600V V(DRM), 600V V(RRM), 1 Ele | |
S30DGF6B0F | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 550A I(T)RMS, 205000mA I(T), 600V V(DRM), 600V V(RRM), 1 Ele | |
S30DGF8A0 | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 550A I(T)RMS, 205000mA I(T), 800V V(DRM), 800V V(RRM), 1 Ele | |
S30DGF8A0F | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 550A I(T)RMS, 205000mA I(T), 800V V(DRM), 800V V(RRM), 1 Ele | |
S30DGF8B0F | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 550A I(T)RMS, 205000mA I(T), 800V V(DRM), 800V V(RRM), 1 Ele |