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S30DGF4A0

更新时间: 2024-02-09 02:13:43
品牌 Logo 应用领域
英飞凌 - INFINEON 栅极
页数 文件大小 规格书
1页 70K
描述
Silicon Controlled Rectifier, 550A I(T)RMS, 225000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-209AE

S30DGF4A0 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:POST/STUD MOUNT, O-MUPM-H3Reach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:5.92
标称电路换相断开时间:8 µs配置:SINGLE
关态电压最小值的临界上升速率:500 V/us最大直流栅极触发电流:150 mA
最大直流栅极触发电压:2.5 V最大维持电流:500 mA
JEDEC-95代码:TO-209AEJESD-30 代码:O-MUPM-H3
最大漏电流:40 mA湿度敏感等级:1
通态非重复峰值电流:12000 A元件数量:1
端子数量:3最大通态电流:225000 A
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:METAL封装形状:ROUND
封装形式:POST/STUD MOUNT峰值回流温度(摄氏度):225
认证状态:Not Qualified最大均方根通态电流:550 A
断态重复峰值电压:400 V重复峰值反向电压:400 V
子类别:Silicon Controlled Rectifiers表面贴装:NO
端子形式:HIGH CURRENT CABLE端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SCR
Base Number Matches:1

S30DGF4A0 数据手册

  

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S30DGF4A0F INFINEON

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Silicon Controlled Rectifier, 550A I(T)RMS, 225000mA I(T), 400V V(DRM), 400V V(RRM), 1 Ele
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Silicon Controlled Rectifier, 550A I(T)RMS, 225000mA I(T), 400V V(DRM), 400V V(RRM), 1 Ele
S30DGF4B0F INFINEON

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Silicon Controlled Rectifier, 550A I(T)RMS, 225000mA I(T), 400V V(DRM), 400V V(RRM), 1 Ele
S30DGF6A0 INFINEON

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Silicon Controlled Rectifier, 550A I(T)RMS, 205000mA I(T), 600V V(DRM), 600V V(RRM), 1 Ele
S30DGF6A0F INFINEON

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Silicon Controlled Rectifier, 550A I(T)RMS, 205000mA I(T), 600V V(DRM), 600V V(RRM), 1 Ele
S30DGF6B0 INFINEON

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Silicon Controlled Rectifier, 550A I(T)RMS, 205000mA I(T), 600V V(DRM), 600V V(RRM), 1 Ele
S30DGF6B0F INFINEON

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Silicon Controlled Rectifier, 550A I(T)RMS, 205000mA I(T), 600V V(DRM), 600V V(RRM), 1 Ele
S30DGF8A0 INFINEON

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Silicon Controlled Rectifier, 550A I(T)RMS, 205000mA I(T), 800V V(DRM), 800V V(RRM), 1 Ele
S30DGF8A0F INFINEON

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Silicon Controlled Rectifier, 550A I(T)RMS, 205000mA I(T), 800V V(DRM), 800V V(RRM), 1 Ele
S30DGF8B0F INFINEON

获取价格

Silicon Controlled Rectifier, 550A I(T)RMS, 205000mA I(T), 800V V(DRM), 800V V(RRM), 1 Ele