5秒后页面跳转
| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| S30DGFH8B0F | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 550A I(T)RMS, 205000mA I(T), 800V V(DRM), 800V V(RRM), 1 Ele |
|
| S30DGH2A0 | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 550A I(T)RMS, 325000mA I(T), 200V V(DRM), 200V V(RRM), 1 Ele |
|
| S30DGH2A0PBF | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 550A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-209AE |
|
| S30DGH2B0 | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 550A I(T)RMS, 300000mA I(T), 200V V(DRM), 200V V(RRM), 1 Ele |
|
| S30DGH2B0PBF | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 550A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-209AE |
|
| S30DGH4A0 | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 550A I(T)RMS, 325000mA I(T), 400V V(DRM), 400V V(RRM), 1 Ele |
|
| S30DGH4A0PBF | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 550A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-209AE |
|
| S30DGH4B0 | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 550A I(T)RMS, 300000mA I(T), 400V V(DRM), 400V V(RRM), 1 Ele |
|
| S30DGH6A0 | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 550A I(T)RMS, 300000mA I(T), 600V V(DRM), 600V V(RRM), 1 Ele |
|
| S30DGH6A0PBF | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 550A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-209AE |
|
塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
英特尔震撼发布：128核心256线程的至强6性能核处理器
SK海力士量产12层HBM3E，容量高达36GB
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
工作时间：9:00-21:00
CEO邮箱：ceo@jiepei.com
投诉邮箱：tousu@jiepei.com
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
