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S2BHE3/52T PDF预览

S2BHE3/52T

更新时间： 2024-10-29 15:50:19
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
4页 74K
描述
DIODE 1.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN, Rectifier Diode

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S2BHE3/52T 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Obsolete零件包装代码：DO-214AA
包装说明：R-PDSO-C2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.12
Is Samacsys：N其他特性：FREE WHEELING DIODE, LOW LEAKAGE CURRENT, HIGH RELIABILITY
应用：GENERAL PURPOSE配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：1.15 VJEDEC-95代码：DO-214AA
JESD-30 代码：R-PDSO-C2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值正向电流：50 A
元件数量：1相数：1
端子数量：2最高工作温度：150 °C
最低工作温度：-55 °C最大输出电流：1.5 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
认证状态：Not Qualified最大重复峰值反向电压：100 V
最大反向恢复时间：2 µs子类别：Rectifier Diodes
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：C BEND端子位置：DUAL
处于峰值回流温度下的最长时间：40Base Number Matches：1

S2BHE3/52T 数据手册

 浏览型号S2BHE3/52T的Datasheet PDF文件第2页浏览型号S2BHE3/52T的Datasheet PDF文件第3页浏览型号S2BHE3/52T的Datasheet PDF文件第4页 
S2A, S2B, S2D, S2G, S2J, S2K, S2M  
www.vishay.com  
Vishay General Semiconductor  
Surface Mount Glass Passivated Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Low forward voltage drop  
• Low leakage current  
• High forward surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
DO-214AA (SMB)  
• AEC-Q101 qualified  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
IF(AV)  
1.5 A  
TYPICAL APPLICATIONS  
50V,100V,200V,400V,600V,  
800 V, 1000 V  
VRRM  
For use in general purpose rectification of power supplies,  
inverters, converters and freewheeling diodes for consumer,  
automotive and telecommunication.  
IFSM  
IR  
50 A  
1.0 μA  
VF  
1.15 V  
MECHANICAL DATA  
TJ max.  
Package  
Diode variations  
150 °C  
Case: DO-214AA (SMB)  
DO-214AA (SMB)  
Single die  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL S2A  
S2B  
SB  
S2D  
SD  
S2G  
SG  
S2J  
SJ  
S2K  
SK  
S2M UNIT  
Device marking code  
SA  
SM  
Max. repetitive peak reverse voltage  
Max. RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
1.5  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
A
Max. DC blocking voltage  
Max. average forward rectified current at TL= 100 °C  
100  
1000  
IF(AV)  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
50  
A
Operating and storage temperature range  
TJ, TSTG  
- 55 to + 150  
°C  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
S2A  
S2B  
S2D  
S2G  
S2J  
S2K  
S2M  
UNIT  
Max. instantaneous forward  
voltage  
1.5 A  
VF  
1.15  
V
T
A = 25 °C  
1.0  
Max. DC reverse current at  
rated DC blocking voltage  
IR  
μA  
TA = 125 °C  
125  
IF = 0.5 A, IR = 1.0 A,  
Typical reverse recovery time  
Typical junction capacitance  
trr  
2.0  
16  
μs  
I
rr = 0.25 A  
4.0 V, 1 MHz  
CJ  
pF  
Revision: 14-Aug-13  
Document Number: 88712  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234

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S2BHE3/52T 替代型号

型号 品牌 替代类型 描述 数据表
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